On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. - Mehdi Rzin; Alessandro Chini; Carlo De Santi; Matteo Meneghini; A. Hugger; Marc Hollmer; H. Stieglauer; M. Madel; J. Splettstößer; Daniel Sommer; Jan Grünenpütt; K. Beilenhoff; et al. (Microelectron. Reliab., 2018)

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. - Zhan Gao; Francesca Chiocchetta; Carlo De Santi; Nicola Modolo; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Hervé Blanck; H. Stieglauer; D. Sommer; Benoit Lambert; et al. (IRPS, 2022)