7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate. - JungChak Ahn; Kyungho Lee; Yitae Kim; Heegeun Jeong; Bumsuk Kim; Hongki Kim; Jongeun Park; Taesub Jung; Wonje Park; Taeheon Lee; Eunkyung Park 003; Sangjun Choi; et al. (ISSCC, 2014)

5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology. - Hyunchul Kim; Jongeun Park; Insung Joe; Doowon Kwon; Joo Hyoung Kim; Dongsuk Cho; Taehun Lee; Changkyu Lee; Haeyong Park; Soojin Hong; Chongkwang Chang; Jingyun Kim; et al. (ISSCC, 2020)

7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation. - Jongeun Park; Sungbong Park; Kwansik Cho; Taehun Lee; Changkyu Lee; Donghyun Kim; Beomsuk Lee; SungIn Kim; Ho-Chul Ji; Dongmo Im; Haeyong Park; Jinyoung Kim; et al. (ISSCC, 2021)

A 64Mpixel CMOS Image Sensor with 0.50µm Unit Pixels Separated by Front Deep-Trench Isolation. - Sungbong Park; Changkyu Lee; Sangcheon Park; Haeyong Park; Taeheon Lee; Dami Park; Minsung Heo; Inyong Park; Hyunyoung Yeo; Youna Lee; Juhee Lee; Beomsuk Lee; et al. (ISSCC, 2022)