An analytical model for SOI triple RESURF devices. - Haimeng Huang; Yongwei Wang; Xingbi Chen (ASICON, 2011)

Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices. - Haimeng Huang; Jun Huang; Huan Hu; Junji Cheng; Bo Yi (IEEE Access, 2019)

SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield. - Bo Yi; Hao Hu; Jia Lin; Junji Cheng; Haimeng Huang; MouFu Kong (IEICE Electron. Express, 2019)

Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance. - Junji Cheng; Jingjie Lin; Weizhen Chen; Shiying Wu; Haimeng Huang; Bo Yi (IEEE Access, 2020)

Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. - Bo Yi; Yi Feng Peng; Qing Zhao; MouFu Kong; Junji Cheng; Haimeng Huang (IEICE Electron. Express, 2020)

A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances. - Zheng Wu; Chao Xia; Bo Yi; Junji Cheng; Haimeng Huang; Moufu Kong; Hongqiang Yang; Wenkun Shi (ASICON, 2021)

A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp. - Bo Yi; Zheng Wu; Junji Cheng; Haimeng Huang; Moufu Kong; Hongqiang Yang (ASICON, 2021)

Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. - Bo Yi; Haimeng Huang; Haoran Hu; MouFu Kong; Yilin Guo; Wenkun Shi; Junji Cheng; Hongqiang Yang (ASICON, 2023)

Temperature Dependent Optimization for Specific On-Resistance for 900 V Superjunction MOSFETs: Numerical Calculation and Comparison. - Zonghao Zhang; Xi Wang; Keqiang Ma; Siliang Wang; Chenxing Wang; Haoyang Zhou; Haimeng Huang; Junji Cheng; Bo Yi; Hongqiang Yang (ASICON, 2023)

Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design. - Bo Yi; Yi Xu; LiTian Zheng; Junji Cheng; Haimeng Huang; MouFu Kong; Hongqiang Yang (Microelectron. J., 2023)

Design and Process Analysis of a Split-Gate Trench Power MOSFET With Bottom-Trench High-k Pillar Superjunction for Enhanced Performance. - Yunteng Jiang; Zhentao Xiao; Zonghao Zhang; Junchen Zhang; Chenxing Wang; Wenjun Li; Haimeng Huang; Aynul Islam; Hongqiang Yang (IEEE Access, 2025)

Taylor modeling and comparative research containing aspect-ratio dependent optimization of three-dimensional Hk superjunction MOSFETs. - Haimeng Huang; Zhentao Xiao; Zonghao Zhang; Chenxing Wang; Hongqiang Yang (Microelectron. J., 2025)