Superior Optoelectronic Performance of N-Polar GaN LED to Ga-Polar Counterpart in the "Green Gap" Range. - Yangfeng Li; Yang Jiang; Haiqiang Jia; Wenxin Wang; Rong Yang; Hong Chen (IEEE Access, 2022)

Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure. - Xinxin Li; Zhen Deng; Ziguang Ma; Yang Jiang; Chunhua Du; Haiqiang Jia; Wenxin Wang; Hong Chen (Sensors, 2022)

Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN. - Yangfeng Li; Zian Dong; Shuai Chen; Qin Wang; Tong Li; Shulin Chen; Kun Zheng; Jie Zhang; Guojian Ding; Yang Wang; Haiqiang Jia; Rong Yang; et al. (Sci. China Inf. Sci., 2024)

Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT. - Fangzhou Wang; Changhong Gao; Guojian Ding; Cheng Yu; Zhuocheng Wang; Xiaohui Wang; Qi Feng; Ping Yu; Peng Zuo; Wanjun Chen; Yang Wang; Haiqiang Jia; et al. (Sci. China Inf. Sci., 2025)