Development of the human fetal hippocampal formation during early second trimester. - Xinting Ge; Yonggang Shi; Junning Li; Zhonghe Zhang; Xiangtao Lin; Jinfeng Zhan; Haitao Ge; Junhai Xu; Qiaowen Yu; Yuan Leng; Gaojun Teng; Lei Feng; et al. (NeuroImage, 2015)

An Efficient and Reliable Negative Margin Timing Error Detection for Neural Network Accelerator without Accuracy Loss in 28nm CMOS. - Ziyu Li; Weiwei Shan; Chengjun Wu; Haitao Ge; Jun Yang 006 (A-SSCC, 2021)

A 28nm, 4.69TOPS/W Training, 2.34µJ/lmage Inference, on-chip Training Accelerator with Inference-compatible Back Propagation. - Haitao Ge; Weiwei Shan; Yicheng Lu; Jun Yang 006 (ICTA, 2022)

A 28nm All-Digital, 1.92-7.32mV/LSB, 0.5-2GS/s sample rate, 0-latency Voltage Sensor with Dynamic PVT Calibration for Wide-range Adaptive Voltage Scaling. - Yuxuan Du; Haitao Ge; Zhuo Chen; Kaize Zhou; Zhengguo Shen; Weiwei Shan (CICC, 2023)

14.2 Proactive Voltage Droop Mitigation Using Dual-Proportional-Derivative Control Based on Current and Voltage Prediction Applied to a Multicore Processor in 28nm CMOS. - Weiwei Shan; Kaize Zhou; Keran Li; Yuxuan Du; Zhuo Chen; Junyi Qian; Haitao Ge; Jun Yang 006; Xin Si (ISSCC, 2024)

An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer. - Haitao Ge; Wang-zi-xuan Zhen; Cheng-hao Yu; Masayuki Yamamoto; Wen-Sheng Zhao; Haoming Guo; Xiao-dong Wu (Microelectron. J., 2024)

High-Performance Four-Channel Tactile Sensor for Measuring the Magnitude and Orientation of Forces. - Mingyao Zhang; Yong Shi; Haitao Ge; Guopeng Sun; Zihan Lian; Yifei Lu (Sensors, 2024)

A 4.69-TOPS/W Training, 2.34-μJ/Image Inference On-Chip Training Accelerator With Inference-Compatible Backpropagation and Design Space Exploration in 28-nm CMOS. - Junyi Qian; Haitao Ge; Yicheng Lu; Weiwei Shan (IEEE J. Solid State Circuits, 2025)

A Proactive Droop Mitigation Technique Using Dual-Proportional-Derivative Controller Based on Current and Voltage Prediction. - Kaize Zhou; Weiwei Shan; Keran Li; Zhuo Chen; Haitao Ge; Jun Yang 006 (IEEE J. Solid State Circuits, 2025)