A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues. - Hakim Tahi; Boualem Djezzar; Abdelmadjid Benabdelmoumene (Microelectron. Reliab., 2013)

Does NBTI effect in MOS transistors depend on channel length? - Abdelmadjid Benabdelmoumene; Boualem Djezzar; Hakim Tahi; Amel Chenouf; Mohamed Goudjil; Rafik Serhane; Fayçal Hadj Larbi; Mohamed Kechouane (ICM, 2014)

Reaction-diffusion model for interface traps induced by BTS stress including H+, H and H2 as diffusion species. - Mohamed Boubaaya; Hakim Tahi; Boualem Djezzar; Karim Benmassai; Abdelmadjid Benabdelmoumene; Mohamed Goudjil; Djamila Doumaz; Abdelhak Feraht Hemida (IDT, 2014)

Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses. - Amel Chenouf; Boualem Djezzar; Abdelmadjid Benabdelmoumene; Hakim Tahi; Mohamed Goudjil (IDT, 2014)

Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction. - Hakim Tahi; Boualem Djezzar; Karim Benmassai; Mohamed Boubaaya; Abdelmadjid Benabdelmoumene; Amel Chenouf; Mohamed Goudjil (IDT, 2014)

An Accurate Combination of on-the-fly Interface Trap and Threshold Voltage Methods for NBTI Degradation Extraction. - Cherifa Tahanout; Hakim Tahi; Boualem Djezzar; Abdelmadjid Benabdelmoumene; Mohamed Goudjil; Bécharia Nadji (J. Electron. Test., 2014)

Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique. - Hakim Tahi; Boualem Djezzar; Abdelmadjid Benabdelmoumene; Amel Chenouf; Mohamed Goudjil (Microelectron. Reliab., 2014)

Low magnetic field Impact on NBTI degradation. - S. M. Merah; Bécharia Nadji; Hakim Tahi (Microelectron. Reliab., 2015)