Data regeneration and disturb immunity of T-RAM cells. - Halid Mulaosmanovic; Christian Monzio Compagnoni; Niccolo Castellani; Gianpietro Carnevale; Domenico Ventrice; Paolo Fantini; Alessandro S. Spinelli; Andrea L. Lacaita; Augusto Benvenuti (ESSDERC, 2014)

Impact of field cycling on HfO2 based non-volatile memory devices. - Uwe Schroeder; Milan Pesic; Tony Schenk; Halid Mulaosmanovic; Stefan Slesazeck; Johannes Ocker; Claudia Richter; Ekaterina Yurchuk; K. Khullar; Johannes Müller; Patrick Polakowski; E. D. Grimley; et al. (ESSDERC, 2016)

Characterization and modeling of innovative solid-state memory technologies. - Halid Mulaosmanovic (2016)

Computing with ferroelectric FETs: Devices, models, systems, and applications. - Ahmedullah Aziz; Evelyn T. Breyer; An Chen; Xiaoming Chen 003; Suman Datta; Sumeet Kumar Gupta; Michael Hoffmann 008; Xiaobo Sharon Hu; Adrian M. Ionescu; Matthew Jerry; Thomas Mikolajick; Halid Mulaosmanovic; et al. (DATE, 2018)

Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology. - Evelyn T. Breyer; Halid Mulaosmanovic; Stefan Slesazeck; Thomas Mikolajick (ISCAS, 2018)

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices. - Ian O'Connor; Mayeul Cantan; Cédric Marchand 002; Bertrand Vilquin; Stefan Slesazeck; Evelyn T. Breyer; Halid Mulaosmanovic; Thomas Mikolajick; Bastien Giraud; Jean-Philippe Noel; Adrian M. Ionescu; Igor Stolichnov (VLSI-SoC, 2018)

Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. - Thomas Mikolajick; Halid Mulaosmanovic; Michael Hoffmann 008; Benjamin Max; Terence Mittmann; Uwe Schroeder; Stefan Slesazeck (DRC, 2019)

Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory. - Evelyn T. Breyer; Halid Mulaosmanovic; Jens Trommer; Thomas Melde; Stefan Dünkel; Martin Trentzsch; Sven Beyer; Thomas Mikolajick; Stefan Slesazeck (ESSDERC, 2019)

IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF. - Sabine Kolodinski; Boli Peng; Ciro Esposito; Yves Zimmermann; Michael Schröter; Xin Xu; Paolo Valerio Testa; Corrado Carta; Frank Ellinger; Steffen Lehmann; M. Drescher; Clemens Mart; et al. (ESSDERC, 2019)

Adoption of 2T2C ferroelectric memory cells for logic operation. - Taras Ravsher; Halid Mulaosmanovic; Evelyn T. Breyer; Viktor Havel; Thomas Mikolajick; Stefan Slesazeck (ICECS, 2019)

Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors. - Bharathwaj Suresh; Martin Bertele; Evelyn T. Breyer; Philipp Klein; Halid Mulaosmanovic; Thomas Mikolajick; Stefan Slesazeck; Elisabetta Chicca (ICECS, 2019)

Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays. - Evelyn T. Breyer; Halid Mulaosmanovic; Stefan Slesazeck; Thomas Mikolajick (ISCAS, 2020)

Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. - Halid Mulaosmanovic; Patrick D. Lomenzo; Uwe Schroeder; Stefan Slesazeck; Thomas Mikolajick; Benjamin Max (IRPS, 2021)

Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing. - Benjamin Max; Michael Hoffmann 008; Halid Mulaosmanovic; Stefan Slesazeck; Thomas Mikolajick (CoRR, 2021)

Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window. - Zhouhang Jiang; Yi Xiao 008; Swetaki Chatterjee; Halid Mulaosmanovic; Stefan Dünkel; Steven Soss; Sven Beyer; Rajiv V. Joshi; Yogesh Singh Chauhan; Hussam Amrouch; Vijaykrishnan Narayanan; Kai Ni 004 (VLSI Technology and Circuits, 2022)

Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines. - Yixin Xu 001; Zijian Zhao 001; Yi Xiao 008; Tongguang Yu; Halid Mulaosmanovic; Dominik Kleimaier; Stefan Dünkel; Sven Beyer; Xiao Gong; Rajiv V. Joshi; X. Sharon Hu; Shixian Wen; et al. (CoRR, 2022)

Ferroelectric-based synapses and neurons for neuromorphic computing. - Erika Covi; Halid Mulaosmanovic; Benjamin Max; Stefan Slesazeck; Thomas Mikolajick (Neuromorph. Comput. Eng., 2022)

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications. - Franz Müller 001; Sourav De 002; Maximilian Lederer; Raik Hoffmann; Ricardo Olivo; Thomas Kämpfe; Konrad Seidel; Tarek Ali; Halid Mulaosmanovic; Stefan Dünkel; Johannes Müller; Sven Beyer; et al. (IMW, 2023)

FeFET-based MirrorBit cell for High-density NVM storage. - Paritosh Meihar; Rowtu Srinu; Vivek Saraswat; Sandip Lashkare; Halid Mulaosmanovic; Stefan Dünkel; Sven Beyer; Udayan Ganguly (CoRR, 2023)

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET. - Zijian Zhao 001; Shan Deng; Swetaki Chatterjee; Zhouhang Jiang; Muhammad Shaffatul Islam; Yi Xiao 008; Yixin Xu 001; Scott Meninger; Mohamed Mohamed 011; Rajiv V. Joshi; Yogesh Singh Chauhan; Halid Mulaosmanovic; et al. (CoRR, 2023)

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications. - Paritosh Meihar; Rowtu Srinu; Sandip Lashkare; Ajay Kumar Singh; Halid Mulaosmanovic; Veeresh Deshpande; Stefan Dünkel; Sven Beyer; Udayan Ganguly (CoRR, 2023)

Charge trapping challenges of CMOS embedded complementary FeFETs. - Sven Beyer; Dominik Kleimaier; Stefan Dünkel; Halid Mulaosmanovic; Steven Soss; Johannes Müller; Zhouhang Jiang; Kai Ni 004; Thomas Mikolajick; Haidi Zhou (IMW, 2024)

Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out. - Omkar Phadke; Halid Mulaosmanovic; Stefan Dünkel; Sven Beyer; Shimeng Yu (IRPS, 2024)

Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors. - Dominik Kleimaier; Stefan Dünkel; Halid Mulaosmanovic; Johannes Müller; Sven Beyer; Viktor Havel; Thomas Mikolajick (NVMTS, 2024)

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate. - Zijian Zhao 001; Sola Woo; Khandker Akif Aabrar; Sharadindu Gopal Kirtania; Zhouhang Jiang; Shan Deng; Yi Xiao 008; Halid Mulaosmanovic; Stefan Dünkel; Dominik Kleimaier; Steven Soss; Sven Beyer; et al. (CoRR, 2024)

Reconfigurable Time-Domain In-Memory Computing Marco using CAM FeFET with Multilevel Delay Calibration in 28 nm CMOS. - Jeries Mattar; Mor M. Dahan; Stefan Dünkel; Halid Mulaosmanovic; Sven Beyer; Eilam Yalon; Nicolás Wainstein (CoRR, 2025)

A Bio-inspired Asymmetric Double-Gate Ferroelectric FET for Emulating Astrocyte and Dendrite Dynamics in Neuromorphic Systems. - Zhouhang Jiang; A. N. M. Nafiul Islam; Zhuangyu Han; Zijian Zhao 001; Franz Müller 001; Jiahui Duan; Halid Mulaosmanovic; Stefan Dünkel; Sven Beyer; Sourav Dutta; Vijaykrishnan Narayanan; Thomas Kämpfe; et al. (CoRR, 2025)