Active defects in MOS devices on 4H-SiC: A critical review. - Hamid Amini Moghadam; Sima Dimitrijev; Jisheng Han; Daniel Haasmann (Microelectron. Reliab., 2016)

The Correct Equation for the Current Through Voltage-Dependent Capacitors. - Utkarsh Jadli; Faisal Mohd-Yasin; Hamid Amini Moghadam; Jordan R. Nicholls; Peyush Pande; Sima Dimitrijev (IEEE Access, 2020)

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs. - Utkarsh Jadli; Faisal Mohd-Yasin; Hamid Amini Moghadam; Peyush Pande; Jordan R. Nicholls; Sima Dimitrijev (IEEE Access, 2020)

Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method. - Mayank Chaturvedi; Sima Dimitrijev; Hamid Amini Moghadam; Daniel Haasmann; Peyush Pande; Utkarsh Jadli (IEEE Access, 2021)

Low-cost Approach to Expose Students to Electronic Prototyping and Manufacturing Processes. - Faisal Mohd-Yasin; Will Sutton; Hamid Amini Moghadam (ICEED, 2024)