Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk. - Hamilton Carrillo-Nunez; Mathieu Luisier; Andreas Schenk (ESSDERC, 2014)

Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling paths. - Hamilton Carrillo-Nunez; Mathieu Luisier; Andreas Schenk (ESSDERC, 2015)

Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs. - Hamilton Carrillo-Nunez; Reto Rhyner; Mathieu Luisier; Andreas Schenk (ESSDERC, 2016)