Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁-ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design. - Jian-Hong Ke; Ching-Sung Lee; Han-Yin Liu; Jung-Hui Tsai; Wei-Chou Hsu (IEEE Access, 2024)