Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design. - Brian R. Wier; Rafael Perez Martinez; Uppili S. Raghunathan; Hanbin Ying; Saeed Zeinolabedinzadeh; John D. Cressler (BCICTS, 2018)

A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology. - Yunyi Gong; Seokchul Lee; Hanbin Ying; Anup P. Omprakash; Edward Gebara; Huifang Gu; Charles Nicholls; John D. Cressler (BCICTS, 2019)

DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures. - Hanbin Ying; Jeffrey W. Teng; George N. Tzintzarov; Anup P. Omprakash; Sunil G. Rao; Uppili S. Raghunathan; Adrian Ildefonso; Martin S. Fernandez; John D. Cressler (BCICTS, 2019)

Cryogenic Characterization of Antiferroelectric Zirconia down to 50 mK. - Zheng Wang; Hanbin Ying; Nujhat Tasneem; Anthony Gaskell; John D. Cressler; Martin Mourigal; Asif Islam Khan (DRC, 2019)

Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing. - Hanbin Ying; Sunil G. Rao; Jeffrey W. Teng; Milad Frounchi; Markus Müller; Xiaodi Jin; Michael Schröter; John D. Cressler (BCICTS, 2020)

Millimeter-Wave SiGe Radiometer Front End With Transformer-Based Dicke Switch and On-Chip Calibration Noise Source. - Milad Frounchi; Amirreza Alizadeh; Hanbin Ying; Christopher T. Coen; Albin J. Gasiewski; John D. Cressler (IEEE J. Solid State Circuits, 2021)