Channel-carrier mobility parameters for 4H SiC MOSFETs. - Handoko Linewih; Sima Dimitrijev; Kuan Yew Cheong (Microelectron. Reliab., 2003)

Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration. - Tianlu Wang; Yu Zhong; Lan Luo; Fanpeng Zeng; Ziang Zhao; Yingxin Cui; Mingsheng Xu; Xiangang Xu; Handoko Linewih; Jisheng Han (Microelectron. J., 2025)