A 57.9-to-68.3GHz 24.6mW frequency synthesizer with in-phase injection-coupled QVCO in 65nm CMOS. - Xiang Yi; Chirn Chye Boon; Hang Liu 006; Jia-fu Lin; Jian Cheng Ong; Wei Meng Lim (ISSCC, 2013)

A 57.9-to-68.3 GHz 24.6 mW Frequency Synthesizer With In-Phase Injection-Coupled QVCO in 65 nm CMOS Technology. - Xiang Yi; Chirn Chye Boon; Hang Liu 006; Jia-fu Lin; Wei Meng Lim (IEEE J. Solid State Circuits, 2014)

Cell-Based Variable-Gain Amplifiers With Accurate dB-Linear Characteristic in 0.18 µm CMOS Technology. - Hang Liu 006; Xi Zhu 001; Chirn Chye Boon; Xiaofeng He (IEEE J. Solid State Circuits, 2015)

An Inductorless 5-GHz Differential Dual Regulated Cross-Cascode Transimpedance Amplifier using 40 nm CMOS. - Bai Song Samuel Lee; Hang Liu 006; Xiaopeng Yu 002; Jer-Ming Chen; Kiat Seng Yeo (ASICON, 2019)

An Inductorless 6-GHz Variable Gain Differential Transimpedance Amplifier in 0.18-μm SiGe BiCMOS. - Bai Song Samuel Lee; Hang Liu 006; Kiat Seng Yeo (ISCAS, 2019)

Design of a Wideband Variable-Gain Amplifier With Self-Compensated Transistor for Accurate dB-Linear Characteristic in 65 nm CMOS Technology. - Lingshan Kong; Hang Liu 006; Xi Zhu 001; Chirn Chye Boon; Chenyang Li 008; Zhe Liu 038; Kiat Seng Yeo (IEEE Trans. Circuits Syst., 2020)

A Monolithically Integrated Single-Input Load-Modulated Balanced Amplifier With Enhanced Efficiency at Power Back-Off. - Lang Chen; Hang Liu 006; Jefferson A. Hora; J. Andrew Zhang; Kiat Seng Yeo; Xi Zhu 001 (IEEE J. Solid State Circuits, 2021)

A 60 GHz 8-Way Combined Power Amplifier in 0.18 μm SiGe BiCMOS. - Hang Liu 006; Xi Zhu 001; Yisheng Wang; Kai Men; Kiat Seng Yeo (IEEE Trans. Circuits Syst. II Express Briefs, 2021)