Electronic properties of GST for non-volatile memory. - Hangbing Lv; Peng Zhou; Yinyin Lin; Tingao Tang; Baowei Qiao; Yunfeng Lai; Jie Feng; Bingchu Cai; Bomy Chen (Microelectron. J., 2006)

A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement. - Xiaowei Han; Qian Jia; Hongbin Sun 001; Longfei Wang; Huaqiang Wu; Yimao Cai; Feng Zhang 014; Yongyi Xie; Fangxu Dong; Xiaoguang Wang 015; Xiaofei Xue; Li Pang; et al. (CICC, 2017)

Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F2 and K-means Clustering for Power Reduction. - Keji Zhou; Xiaoyong Xue; Jianguo Yang; Xiaoxin Xu; Hangbing Lv; Mingyu Wang 001; Ming-e Jing; Wenjun Liu; Xiaoyang Zeng; Steve S. Chung; Jing Li; Ming Liu 022 (A-SSCC, 2018)

Resistive Switching Devices: Mechanism, Performance and Integration. - Ming Liu 022; Qi Liu 010; Hangbing Lv; Shibing Long (Handbook of Memristor Networks, 2019)

A High Reliability 500 µW Resistance-to-Digital Interface Circuit for SnO2 Gas Sensor IoT Applications. - Jianguo Yang; Xiaowen Li; Qingting Ding; Xiaoyong Xue; Xiaoxin Xu; Qing Luo; Hangbing Lv; Ming Liu 022 (ASICON, 2019)

A 28nm 512Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for extremely low bit error rate of cryptographic key. - Xiaoyong Xue; Jianguo Yang; Yuejun Zhang; Mingyu Wang 001; Hangbing Lv; Xiaoyang Zeng; Ming Liu 022 (A-SSCC, 2019)

A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique. - Jiahao Yin; Chunmeng Dou; Danian Dong; Jie Yu 027; Xiaoxin Xu; Qing Luo; Tiancheng Gong; Lu Tai; Peng Yuan; Xiaoyong Xue; Ming Liu 022; Hangbing Lv (IEICE Electron. Express, 2019)

A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneaking Current Suppression and Compensation Techniques. - Jianguo Yang; Xiaoyong Xue; Xiaoxin Xu; Hangbing Lv; Feng Zhang 014; Xiaoyang Zeng; Meng-Fan Chang; Ming Liu 022 (VLSI Circuits, 2020)

Ion-Gated Transistor: An Enabler for Sensing and Computing Integration. - Xianbao Bu; Han Xu; Dashan Shang; Yue Li; Hangbing Lv; Qi Liu 010 (Adv. Intell. Syst., 2020)

A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme. - Chao Liu; Jianguo Yang; Pengfei Jiang; Qiao Wang; Donglin Zhang; Tiancheng Gong; Qingting Ding; Yuling Zhao; Qing Luo; Xiaoyong Xue; Hangbing Lv; Ming Liu 022 (IEEE Trans. Very Large Scale Integr. Syst., 2020)

Scaling Potential Analysis for the CMOS Compatible Ox-RRAM. - Xiaoxin Xu; Wenxuan Sun; Jie Yu 027; Jinru Lai; Danian Dong; Hangbing Lv (IMW, 2021)

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference. - Jianguo Yang; Xiaoyong Xue; Xiaoxin Xu; Qiao Wang; Haijun Jiang; Jie Yu 027; Danian Dong; Feng Zhang 014; Hangbing Lv; Ming Liu 022 (ISSCC, 2021)

Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications. - Qingting Ding; Tiancheng Gong; Jie Yu 027; Xiaoxin Xu; Xiaoyan Li; Hangbing Lv; Jianguo Yang; Qing Luo; Peng Yuan; Feng Zhang 014; Ming Liu 022 (Sci. China Inf. Sci., 2021)

High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications. - Keji Zhou; Xiaoyong Xue; Jianguo Yang; Xiaoxin Xu; Hangbing Lv; Ming-e Jing; Jing Li; Xiaoyang Zeng; Ming Liu 022 (IEEE J. Solid State Circuits, 2021)

A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices. - Jianguo Yang; Ruijun Lin; Keji Zhou; Yuejun Zhang; Xiaoyong Xue; Hangbing Lv (Microelectron. J., 2022)

A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier. - Jianguo Yang; Qing Luo; Xiaoyong Xue; Haijun Jiang; Qiqiao Wu; Zhongze Han; Yue Cao; Yongkang Han; Chunmeng Dou; Hangbing Lv; Qi Liu 010; Ming Liu 022 (ISSCC, 2023)

A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory. - Yulin Zhao; Yuan Wang; Donglin Zhang; Zhongze Han; Qiao Hu; Xuanzhi Liu; Qingting Ding; Jinhui Cheng; Wenjun Zhang; Yue Cao; Ruixi Zhou; Qing Luo; et al. (Sci. China Inf. Sci., 2023)

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. - Zhaohao Zhang; Guohui Zhan; Weizhuo Gan; Yan Cheng; Xumeng Zhang; Yue Peng; Jianshi Tang; Fan Zhang; Jiali Huo; Gaobo Xu; Qingzhu Zhang; Zhenhua Wu; et al. (Adv. Intell. Syst., 2023)

A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier. - Qiqiao Wu; Yue Cao; Qing Luo; Haijun Jiang; Zhongze Han; Yongkang Han; Chunmeng Dou; Hangbing Lv; Qi Liu 010; Jianguo Yang; Ming Liu 022 (IEEE J. Solid State Circuits, 2024)