A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications. - Jonathan Chang; Yen-Huei Chen; Hank Cheng; Wei-Min Chan; Hung-Jen Liao; Quincy Li; Stanley Chang; Sreedhar Natarajan; Robin Lee; Ping-Wei Wang; Shyue-Shyh Lin; Chung-Cheng Wu; et al. (ISSCC, 2013)

12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. - Jonathan Chang; Yen-Huei Chen; Wei-Min Chan; Sahil Preet Singh; Hank Cheng; Hidehiro Fujiwara; Jih-Yu Lin; Kao-Cheng Lin; John Hung; Robin Lee; Hung-Jen Liao; Jhon-Jhy Liaw; et al. (ISSCC, 2017)

12.3 A low-power and high-performance 10nm SRAM architecture for mobile applications. - Michael Clinton; Hank Cheng; Hung-Jen Liao; Robin Lee; Ching-Wei Wu; Johnny Yang; Hau-Tai Hsieh; Frank Wu; Jung-Ping Yang; Atul Katoch; Arun Achyuthan; Donald Mikan; et al. (ISSCC, 2017)

15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. - Jonathan Chang; Yen-Huei Chen; Gary Chan; Hank Cheng; Po-Sheng Wang; Yangsyu Lin; Hidehiro Fujiwara; Robin Lee; Hung-Jen Liao; Ping-Wei Wang; Geoffrey Yeap; Quincy Li (ISSCC, 2020)

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. - Tsung-Yung Jonathan Chang; Yen-Huei Chen; Wei-Min Chan; Hank Cheng; Po-Sheng Wang; Yangsyu Lin; Hidehiro Fujiwara; Robin Lee; Hung-Jen Liao; Ping-Wei Wang; Geoffrey Yeap; Quincy Li (IEEE J. Solid State Circuits, 2021)