On the temperature and voltage dependence of short-term negative bias temperature stress. - Philipp Hehenberger; Paul-Jürgen Wagner; Hans Reisinger; Tibor Grasser (Microelectron. Reliab., 2009)

New insights on the PBTI phenomena in SiON pMOSFETs. - Karina Rott; Hans Reisinger; Stefano Aresu; Christian Schlünder; Klaus Kölpin; Wolfgang Gustin; Tibor Grasser (Microelectron. Reliab., 2012)

Characterization and modeling of charge trapping: From single defects to devices. - Tibor Grasser; Gerhard Rzepa; Michael Waltl; Wolfgang Goes; Karina Rott; Gunnar Andreas Rott; Hans Reisinger; Jacopo Franco; Ben Kaczer (ICICDT, 2014)

Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. - Gunnar Andreas Rott; Karina Rott; Hans Reisinger; Wolfgang Gustin; Tibor Grasser (Microelectron. Reliab., 2014)

Degradation and recovery of variability due to BTI. - Christian Schlünder; Jörg Berthold; Fabian Proebster; Andreas Martin 002; Wolfgang Gustin; Hans Reisinger (Microelectron. Reliab., 2016)

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI. - Katja Puschkarsky; Hans Reisinger; Christian Schlünder; Wolfgang Gustin; Tibor Grasser (ESSDERC, 2018)

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. - Tibor Grasser; Bernhard Stampfer; Michael Waltl; Gerhard Rzepa; Karl Rupp; Franz Schanovsky; Gregor Pobegen; Katja Puschkarsky; Hans Reisinger; Barry J. O'Sullivan; Ben Kaczer (IRPS, 2018)

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. - Katja Puschkarsky; Tibor Grasser; Thomas Aichinger; Wolfgang Gustin; Hans Reisinger (IRPS, 2018)

NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification. - Christian Schlünder; Katja Puschkarsky; Gunnar Andreas Rott; Wolfgang Gustin; Hans Reisinger (Microelectron. Reliab., 2018)

From Device Aging Physics to Automated Circuit Reliability Sign Off. - Christian Schlünder; Katja Waschneck; Peter Rotter; Susanne Lachenmann; Hans Reisinger; Franz Ungar; Georg Georgakos (IRPS, 2019)

Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. - Sebastian Maaß; Hans Reisinger; Thomas Aichinger; Gerald Rescher (IRPS, 2020)

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. - Paul Salmen; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Gerald Rescher; Thomas Aichinger (IRPS, 2021)

Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. - Christian Bogner; Tibor Grasser; Michael Waltl; Hans Reisinger; Christian Schlünder (IRPS, 2022)

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. - Maximilian W. Feil; Hans Reisinger; André Kabakow; Thomas Aichinger; Wolfgang Gustin; Tibor Grasser (IRPS, 2022)

Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. - Christian Bogner; Christian Schlünder; Michael Waltl; Hans Reisinger; Tibor Grasser (IRPS, 2023)

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. - Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Thomas Aichinger; Paul Salmen; Gerald Rescher; Wolfgang Gustin; Tibor Grasser (IRPS, 2023)

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. - Tibor Grasser; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Dominic Waldhör; A. Vasilev; Michael Waltl; Thomas Aichinger; M. Bockstedte; Wolfgang Gustin; Gregor Pobegen (IRPS, 2024)