Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization Study. - Tommaso Rollo; Hansel Lo; Luca Larcher; Christopher Olsen; Milan Pesic (IRPS, 2024)

Novel Material, Process and Device Innovations for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology. - Pratik B. Vyas; Ludovico Megalini; Ashish Pal; Joshua Holt; Archana Kumar; Stephen Weeks; Charisse Zhao; Lucien Date; Hansel Lo; Michel Khoury; Safdar Muhammad; Fabian Piallat; et al. (VLSI Technology and Circuits, 2024)