High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. - Can Gong; Minhan Mi; Yuwei Zhou; Pengfei Wang; Hanzhen Li; Xinyi Wen; Ting Meng; Sirui An; Xiang Du; Kai Cheng; Meng Zhang; Qing Zhu; et al. (Sci. China Inf. Sci., 2025)