Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. - Hao Lu 012; Xiaohua Ma 001; Bin Hou; Ling Yang 003; Teng Huo; Zeyan Si; Yue Hao 001 (ICTA, 2021)

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. - Hao Lu 012; Likun Zhou; Longge Deng; Ling Yang 003; Bin Hou; Xiaohua Ma 001; Yue Hao 001 (ICTA, 2022)

High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. - Qingyuan Chang; Bin Hou; Ling Yang 003; Mei Wu; Meng Zhang; Hao Lu 012; Fuchun Jia; Xuerui Niu; Chunzhou Shi; Jiale Du; Mao Jia; Qian Yu; et al. (Sci. China Inf. Sci., 2024)

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. - Chunzhou Shi; Ling Yang 003; Meng Zhang; Hao Lu 012; Mei Wu; Bin Hou; Xuerui Niu; Qian Yu; Wenliang Liu 003; Wenze Gao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. - Mao Jia; Bin Hou; Ling Yang 003; Meng Zhang; Mei Wu; Hao Lu 012; Xitong Hong; Zhiqiang Xue; Jiale Du; Qingyuan Chang; Qian Xiao; Xiaohua Ma 001; et al. (Sci. China Inf. Sci., 2025)