Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention. - Prasanna Venkatesan Ravindran; Andrea Padovani; Lance Fernandes; Priyankka Gundlapudi Ravikumar; Chinsung Park; Huy Tran; Zekai Wang; Hari Jayasankar; Amrit Garlapati; Taeyoung Song; Hang Chen; Winston Chern; et al. (IRPS, 2025)