Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. - Dmitry Veksler; Gennadi Bersuker; Adam W. Bushmaker; Maribeth Mason; P. R. Shrestha; Kin P. Cheung; Jason P. Campbell; Thomas Rueckes; Lee Cleveland; Harry Luan; David C. Gilmer (IRPS, 2020)

Mitigating switching variability in carbon nanotube memristors. - James Farmer; William Whitehead; Andrew Hall; Dmitry Veksler; Gennadi Bersuker; David Z. Gao; Al-Moatasem El-Sayed; Thomas Durrant; Alexander L. Shluger; Thomas Rueckes; Lee Cleveland; Harry Luan; et al. (IRPS, 2021)

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. - James Farmer; Dmitry Veksler; E. Tang; Gennadi Bersuker; David Z. Gao; Al-Moatasem El-Sayed; Thomas Durrant; Alexander L. Shluger; Thomas Rueckes; Lee Cleveland; Harry Luan; Rahul Sen (IRPS, 2022)