Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits. - Fumitaka Iga; Masashi Kamiyanagi; Shoji Ikeda; Katsuya Miura; Jun Hayakawa; Haruhiro Hasegawa; Takahiro Hanyu; Hideo Ohno; Tetsuo Endoh (IEICE Trans. Electron., 2010)

Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit. - Masashi Kamiyanagi; Fumitaka Iga; Shoji Ikeda; Katsuya Miura; Jun Hayakawa; Haruhiro Hasegawa; Takahiro Hanyu; Hideo Ohno; Tetsuo Endoh (IEICE Trans. Electron., 2010)

A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme. - Riichiro Takemura; Takayuki Kawahara; Katsuya Miura; Hiroyuki Yamamoto; Jun Hayakawa; Nozomu Matsuzaki; Kazuo Ono; Michihiko Yamanouchi; Kenchi Ito; Hiromasa Takahashi; Shoji Ikeda; Haruhiro Hasegawa; et al. (IEEE J. Solid State Circuits, 2010)