Sharp-switching Z2-FET device in 14 nm FDSOI technology. - Hassan El Dirani; Yohann Solaro; Pascal Fonteneau; Philippe Ferrari; Sorin Cristoloveanu (ESSDERC, 2015)

Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes. - Hassan El Dirani; Pascal Fonteneau; Yohann Solaro; Philippe Ferrari; Sorin Cristoloveanu (ESSDERC, 2016)

Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications. - Kyunghwa Lee; Hassan El Dirani; Pascal Fonteneau; Maryline Bawedin; Shingo Sato; Sorin Cristoloveanu (ESSDERC, 2018)