Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate. - Alain Agboton; Nicolas Defrance; Phillipe Altuntas; Vannessa Avramovic; Adrien Cutivet; Rezky Ouhachi; Jean-Claude de Jaeger; Samira Bouzid-Driad; Hassan Maher; Michel Renvoise; Peter Frijlink (ESSDERC, 2013)

Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor. - Flavien Cozette; Marie Lesecq; Nicolas Defrance; Michel Rousseau; Jean-Claude de Jaeger; Adrien Cutivet; Hassan Maher (ESSDERC, 2018)

Scalable Small-Signal Modeling of AlGaN/GaN HEMT Based on Distributed Gate Resistance. - Bilal Hassan; Adrien Cutivet; Christophe Rodriguez; Flavien Cozette; Ali Soltani; Hassan Maher; François Boone (BCICTS, 2019)

Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature. - Hassane Ouazzani Chahdi; Abdallah Ougazzaden; Jean-Paul Salvestrini; Hassan Maher; Ali Soltani; Omar Helli; Nour-Eddine Bourzgui; Léo Breuil; David Danovitch; Paul L. Voss; Suresh Sundaram 004; Vincent Aubry; et al. (IEEE SENSORS, 2019)

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. - P. Vigneshwara Raja; Christophe Raynaud; Camille Sonneville; Atse Julien Eric N'Dohi; Hervé Morel; Luong-Viêt Phung; Thi Huong Ngo; Philippe De Mierry; Éric Frayssinet; Hassan Maher; Josiane Tasselli; Karine Isoird; et al. (Microelectron. J., 2022)

Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications. - Mohammed Benjelloun; Zahraa Zaidan; Ali Soltani; Noëlle Gogneau; Denis Morris; Jean-Christophe Harmand; Hassan Maher (IEEE Access, 2023)