5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. - Jaekyu Lee; Seung Sik Kim; In-Gyu Baek; Heesung Shim; Taehoon Kim; Taehyoung Kim; Jungchan Kyoung; Dongmo Im; Jinyong Choi; KeunYeong Cho; Daehoon Kim; Haemin Lim; et al. (ISSCC, 2020)

A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory. - Min-Woong Seo; Myunglae Chu; Hyun-Yong Jung; Suksan Kim; Jiyoun Song; Junan Lee; Sung-Yong Kim; Jongyeon Lee; Sung-Jae Byun; Daehee Bae; Minkyung Kim 010; Gwi-Deok Lee; et al. (VLSI Circuits, 2021)

Pose Classification Using Three-Dimensional Atomic Structure-Based Neural Networks Applied to Ion Channel-Ligand Docking. - Heesung Shim; Hyojin Kim 001; Jonathan E. Allen; Heike Wulff (J. Chem. Inf. Model., 2022)

2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory. - Min-Woong Seo; Myunglae Chu; Hyun-Yong Jung; Suksan Kim; Jiyoun Song; Daehee Bae; Sanggwon Lee; Junan Lee; Sung-Yong Kim; Jongyeon Lee; Minkyung Kim 010; Gwi-Deok Lee; et al. (IEEE J. Solid State Circuits, 2022)

Enhancing Docking Accuracy with PECAN2, a 3D Atomic Neural Network Trained without Co-Complex Crystal Structures. - Heesung Shim; Jonathan E. Allen; W. F. Drew Bennett (Mach. Learn. Knowl. Extr., 2024)

6.1 A 3-Stacked Hybrid-Shutter CMOS Image Sensor with Switchable 1.2µm -Pitch 50Mpixel Rolling Shutter and 2.4µm -Pitch 12.5Mpixel Global Shutter Modes for Mobile Applications. - Heesung Shim; Seung Sik Kim; Min-Woong Seo; Sangsu Park; Hyukbin Kwon; Yongjun Kim; Sanggwon Lee; Sungbong Park; Daehee Bae; Si Gyoung Koo; Masamichi Ito; Jae-hoon Jeon; et al. (ISSCC, 2025)