COMPOSITE – A Complete Modeling Program of Silicon Technology. - Jürgen Lorenz; Joachim Pelka; Heiner Ryssel; Albert Sachs; Albert Seidl; Milos Svoboda (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1985)

Simulation of silicon semiconductor processing. - Peter Pichler; Heiner Ryssel (Eur. Trans. Telecommun., 1990)

Monte Carlo simulation of silicon amorphization during ion implantation. - Walter Bohmayr; Alexander Burenkov; Jürgen Lorenz; Heiner Ryssel; Siegfried Selberherr (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1998)

Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient. - Matthias Beichele; Anton J. Bauer; Heiner Ryssel (Microelectron. Reliab., 2001)

Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. - Michael P. M. Jank; Martin Lemberger; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2001)

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices. - S. Strobel; Anton J. Bauer; Matthias Beichele; Heiner Ryssel (Microelectron. Reliab., 2001)

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. - Albena Paskaleva; Martin Lemberger; Stefan Zürcher; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2003)

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. - Martin Lemberger; Albena Paskaleva; Stefan Zürcher; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2005)

Quantitative oxide charge determination by photocurrent analysis. - Mathias Rommel; Anton J. Bauer; Heiner Ryssel (Microelectron. Reliab., 2007)

Investigation of the reliability of 4H-SiC MOS devices for high temperature applications. - Martin Le-Huu; Holger Schmitt; Stefan Noll; Michael Grieb; Frederik F. Schrey; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2011)

Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. - Zahir Ouennoughi; C. Strenger; F. Bourouba; V. Haeublein; Heiner Ryssel; Lothar Frey (Microelectron. Reliab., 2013)