Effect of SiO2/Si interface roughness on gate current. - Lingfeng Mao 001; Yao Yang; Jian-Lin Wei; Heqiu Zhang; Mingzhen Xu; Changhua Tan (Microelectron. Reliab., 2001)

The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures. - Lingfeng Mao 001; Heqiu Zhang; Changhua Tan; Mingzhen Xu (Microelectron. Reliab., 2002)