Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation. - R. Petersen; Ward De Ceuninck; Luc De Schepper; Olivier Vendier; Hervé Blanck; Dominique Pons (Microelectron. Reliab., 2001)

Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology. - R. Petersen; Ward De Ceuninck; Jan D'Haen; Marc D'Olieslaeger; Luc De Schepper; Olivier Vendier; Hervé Blanck; Dominique Pons (Microelectron. Reliab., 2002)

GaAs Industry in Europe - Technologies, Trends and New Developments. - Helmut Jung; Hervé Blanck; Wolfgang Bösch; Jim Mayock (IEICE Trans. Electron., 2008)

Reliability of high voltage/high power L/S-band Hbt technology. - Benoit Lambert; G. Jonsson; J. Bataille; C. Ollivier; P. Mezenge; H. Derewonko; H. Thomas; D. Floriot; Hervé Blanck; C. Moreau (Microelectron. Reliab., 2010)

Improved thermal management for GaN power electronics: Silver diamond composite packages. - Mustapha Faqir; Tim Batten; T. Mrotzek; S. Knippscheer; M. Massiot; M. Buchta; Hervé Blanck; Stéphane Rochette; Olivier Vendier; Martin Kuball (Microelectron. Reliab., 2012)

Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification. - Benoit Lambert; Jim Thorpe; Reza Behtash; Bernd Schauwecker; Franck Bourgeois; Helmut Jung; Joëlle Bataille; Patrick Mezenge; Cyril Gourdon; Catherine Ollivier; Didier Floriot; Hervé Blanck (Microelectron. Reliab., 2012)

Reliability studies on GaN HEMTs with sputtered Iridium gate module. - Richard Lossy; Hervé Blanck; Joachim Würfl (Microelectron. Reliab., 2012)

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. - Laurent Brunel; Benoit Lambert; P. Mezenge; J. Bataille; D. Floriot; Jan Grünenpütt; Hervé Blanck; D. Carisetti; Y. Gourdel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat (Microelectron. Reliab., 2013)

Qualification of 50 V GaN on SiC technology for RF power amplifiers. - P. J. van der Wel; T. Rödle; Benoit Lambert; Hervé Blanck; Maximilian Dammann (Microelectron. Reliab., 2013)

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. - Antonio Stocco; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Proton induced trapping effect on space compatible GaN HEMTs. - Antonio Stocco; Simone Gerardin; Davide Bisi; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. - Tommaso Brazzini; Michael A. Casbon; Huarui Sun; Michael J. Uren; Jonathan Lees; Paul J. Tasker; Helmut Jung; Hervé Blanck; Martin Kuball (Microelectron. Reliab., 2015)

Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. - Mikael Broas; Andreas Graff; Michél Simon-Najasek; David Poppitz; Frank Altmann; Helmut Jung; Hervé Blanck (Microelectron. Reliab., 2016)

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. - Andreas Graff; Michél Simon-Najasek; Frank Altmann; Ján Kuzmík; Dagmar Gregusová; S. Hascik; Helmut Jung; T. Baur; Jan Grünenpütt; Hervé Blanck (Microelectron. Reliab., 2017)

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. - Mehdi Rzin; Alessandro Chini; Carlo De Santi; Matteo Meneghini; A. Hugger; Marc Hollmer; H. Stieglauer; M. Madel; J. Splettstößer; Daniel Sommer; Jan Grünenpütt; K. Beilenhoff; et al. (Microelectron. Reliab., 2018)

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. - Francesca Chiocchetta; Carlo De Santi; Fabiana Rampazzo; Kalparupa Mukherjee; Jan Grünenpütt; Daniel Sommer; Hervé Blanck; Benoit Lambert; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. - Zhan Gao; Francesca Chiocchetta; Carlo De Santi; Nicola Modolo; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Hervé Blanck; H. Stieglauer; D. Sommer; Benoit Lambert; et al. (IRPS, 2022)