Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond. - Vincent Fiori; Sébastien Gallois-Garreignot; Hervé Jaouen; Clément Tavernier (Microelectron. Reliab., 2013)

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. - Frederic Monsieur; Yvan Denis; Denis Rideau; Vincent Quenette; Gilles Gouget; Clément Tavernier; Hervé Jaouen; Gérard Ghibaudo; Joris Lacord (ESSDERC, 2014)

Numerical analysis of thermo-mechanical and mobility effects for 28 nm node and beyond: Comparison and design consequences over bumping technologies. - Vincent Fiori; Komi-Atchou Ewuame; Sébastien Gallois-Garreignot; Hervé Jaouen; Clément Tavernier (Microelectron. Reliab., 2014)