On the validity of the standard SPICE model of the diode for simulation in power electronics. - Nouri Massmoudi; Djébé M'bairi; Bruno Allard; Hervé Morel (IEEE Trans. Ind. Electron., 2001)

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications. - Tarek Ben Salah; Sofiane Khachroumi; Hervé Morel (Sensors, 2010)

Analysis of Power Switching Losses Accounting Probe Modeling. - Kaiçar Ammous; Hervé Morel; Anis Ammous (IEEE Trans. Instrum. Meas., 2010)

Inverse Models of Voltage and Current Probes. - Kaiçar Ammous; Hervé Morel; Anis Ammous (IEEE Trans. Instrum. Meas., 2011)

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. - Cheng Chen; Denis Labrousse; Stéphane Lefebvre; Mickael Petit; Cyril Buttay; Hervé Morel (Microelectron. Reliab., 2015)

A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems. - Atef Jedidi; Hatem Garrab; Hervé Morel; Kamel Besbes (IEEE Trans. Ind. Electron., 2015)

Avalanche robustness of SiC Schottky diode. - Ilyas Dchar; Cyril Buttay; Hervé Morel (Microelectron. Reliab., 2016)

On the extraction of the design parameters of power BJTs. - Mehrez Oueslati; Hatem Garrab; Atef Jedidi; Hervé Morel; Kamel Besbes (ICCAD, 2017)

SiC power devices packaging with a short-circuit failure mode capability. - Ilyas Dchar; Cyril Buttay; Hervé Morel (Microelectron. Reliab., 2017)

Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling. - Wissam Sabbah; Faical Arabi; Oriol Avino-Salvado; Cyril Buttay; L. Théolier; Hervé Morel (Microelectron. Reliab., 2017)

High temperature ageing of microelectronics assemblies with SAC solder joints. - Wissam Sabbah; Pierre Bondue; Oriol Avino-Salvado; Cyril Buttay; Hélène Frémont; Alexandrine Guédon-Gracia; Hervé Morel (Microelectron. Reliab., 2017)

A Novel Approach to Accurately Determine the tq Parameter of Thyristors. - Hatem Garrab; Atef Jedidi; Hervé Morel; Kamel Besbes (IEEE Trans. Ind. Electron., 2017)

Robustness study of 1700 V 45 mΩ SiC MOSFETs. - Quentin Molin; Mehdi Kanoun; Christophe Raynaud; Hervé Morel (ICIT, 2018)

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. - Besar Asllani; Asad Fayyaz; Alberto Castellazzi; Hervé Morel; Dominique Planson (Microelectron. Reliab., 2018)

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. - Oriol Avino-Salvado; Hervé Morel; Cyril Buttay; Denis Labrousse; Stéphane Lefebvre (Microelectron. Reliab., 2018)

Measurement and analysis of SiC-MOSFET threshold voltage shift. - Quentin Molin; Mehdi Kanoun; Christophe Raynaud; Hervé Morel (Microelectron. Reliab., 2018)

A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices. - Thilini Wickramasinghe; Stephane Azzopardi; Bruno Allard; Cyril Buttay; Charles Joubert; Christian Martin 003; Jean-François Mogniotte; Hervé Morel; Pascal Bevilacqua; Thanh-Long Le (IECON, 2019)

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. - Besar Asllani; Alberto Castellazzi; Oriol Avino-Salvado; Asad Fayyaz; Hervé Morel; Dominique Planson (IRPS, 2019)

Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design. - Tanguy Simon; Mattia Giaccagli; Jean-François Trégouët; Daniele Astolfi; Vincent Andrieu; Xuefang Lin-Shi; Hervé Morel (CDC, 2021)

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. - P. Vigneshwara Raja; Christophe Raynaud; Camille Sonneville; Atse Julien Eric N'Dohi; Hervé Morel; Luong-Viêt Phung; Thi Huong Ngo; Philippe De Mierry; Éric Frayssinet; Hassan Maher; Josiane Tasselli; Karine Isoird; et al. (Microelectron. J., 2022)

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration. - Ralph Makhoul; Abdelhakim Bourennane; Luong-Viêt Phung; Frédéric Richardeau; Mihai Lazar; Nour Beydoun; Sergueï Kostcheev; Philippe Godignon; Dominique Planson; Hervé Morel; David Bourrier (MIXDES, 2023)

Robust Regulation of a Power Flow Controller via Nonlinear Integral Action. - Tanguy Simon; Mattia Giaccagli; Jean-François Trégouët; Daniele Astolfi; Vincent Andrieu; Hervé Morel; Xuefang Lin-Shi (IEEE Trans. Control. Syst. Technol., 2023)

Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs. - Oriol Avino-Salvado; Cyril Buttay; Ferran Bonet; Christophe Raynaud; Pascal Bevilacqua; José Rebollo; Hervé Morel; Xavier Perpiñà (IEEE Trans. Ind. Electron., 2024)