A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme. - Mun-Kyu Choi; Byung-Gil Jeon; Nakwon Jang; Byung-Jun Min; Yoon-Jong Song; Sung-Yung Lee; Hyun-Ho Kim; Dong-Jin Jung; Heung-Jin Joo; Kinam Kim (IEEE J. Solid State Circuits, 2002)

Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology. - Yoon-Jong Song; Heung-Jin Joo; Seung-Kuk Kang; Hyun-Ho Kim; Jung-Hoon Park; Y. M. Kang; E. Y. Kang; Sung-Young Lee; Kinam Kim (Microelectron. Reliab., 2005)