First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density ( 3 MA/cm2) and Low Resistance Drift ( 0.002 at 105°C). - Asir Intisar Khan; Christopher Perez; Xiangjin Wu; Byoungjun Won; Kangsik Kim; Heungdong Kwon; Pranav Ramesh; Kathryn M. Neilson; Mehdi Asheghi; Krishna Saraswat; Zonghoon Lee; Il-Kwon Oh; et al. (VLSI Technology and Circuits, 2022)

Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer. - Asir Intisar Khan; Heungdong Kwon; Raisul Islam; Christopher Perez; Michelle Chen; Mehdi Asheghi; Kenneth E. Goodson; H.-S. Philip Wong; Eric Pop (IEEE DataPort, 2022)