L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations. - Isao Takenaka; Kouji Ishikura; Hidemasa Takahashi; Kazunori Asano; Junko Morikawa; K. Satou; K. Kishi; Kouichi Hasegawa; K. Tokunaga; Fumiaki Emori; Masaaki Kuzuhara (IEEE J. Solid State Circuits, 1999)

High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station. - Kouji Ishikura; Isao Takenaka; Hidemasa Takahashi; Kouichi Hasegawa; Kazunori Asano; Naotaka Iwata (IEICE Trans. Electron., 2007)

1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET. - Fumio Harima; Yasunori Bito; Hidemasa Takahashi; Naotaka Iwata (IEICE Trans. Electron., 2008)