Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation. - Hajime Sasaki; Kaoru Kadoiwa; Hidetoshi Koyama; Yoshitaka Kamo; Yoshitsugu Yamamoto; Toshiyuki Oishi; Kazuo Hayashi (Microelectron. Reliab., 2014)