Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer. - Cheng-Yu Hu; Katsutoshi Nakatani; Hiroji Kawai; Jin-Ping Ao; Yasuo Ohno (IEICE Trans. Electron., 2010)

Crosstalk in monolithic GaN-on-Silicon power electronic devices. - Vineet Unni; Hiroji Kawai; E. M. Sankara Narayanan (Microelectron. Reliab., 2014)