Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories. - Hiroki Shirakawa; Keita Yamaguchi; Masaaki Araidai; Katsumasa Kamiya; Kenji Shiraishi (IEICE Trans. Electron., 2017)

Atomistic study of SiN based ReRAM with high program/erase cycle endurance. - Keita Yamaguchi; Hiroki Shirakawa; Kenji Shiraishi (IEICE Electron. Express, 2018)