% csauthors.net - beta - BibTeX bibliography of Hiroshi Iwai
@article{journals/tcad/IwaiPROD87,
title = {Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances.},
year = {1987},
journal = {IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.},
author = {{Hiroshi Iwai} and {Mark R. Pinto} and {Conor S. Rafferty} and {J. E. Oristian} and {Robert W. Dutton}}
}
@inproceedings{conf/iccad/WenstrandID89,
title = {A manufacturing-oriented environment for synthesis of fabrication processes.},
year = {1989},
booktitle = {ICCAD},
author = {{John S. Wenstrand} and {Hiroshi Iwai} and {Robert W. Dutton}},
publisher = {IEEE Computer Society},
booktitle = {1989 IEEE International Conference on Computer-Aided Design, ICCAD 1989, Santa Clara, CA, USA, November 5-9, 1989. Digest of Technical Papers}
}
@inproceedings{conf/cicc/Iwai98,
title = {CMOS-year 2010 and beyond; from technological side.},
year = {1998},
booktitle = {CICC},
author = {{Hiroshi Iwai}},
publisher = {IEEE},
booktitle = {Proceedings of the IEEE 1998 Custom Integrated Circuits Conference, CICC 1998, Santa Clara, CA, USA, May 11-14, 1998}
}
@article{journals/jssc/Iwai99,
title = {CMOS technology-year 2010 and beyond.},
year = {1999},
journal = {IEEE J. Solid State Circuits},
author = {{Hiroshi Iwai}}
}
@incollection{reference/vlsi/KatsumataOIMYKNMMYII99,
title = {CMOS/BiCMOS Technology.},
year = {1999},
booktitle = {The VLSI Handbook},
author = {{Yasuhiro Katsumata} and {Tatsuya Ohguro} and {Kazumi Inoh} and {Eiji Morifuji} and {Takashi Yoshitomi} and {Hideki Kimijima} and {Hideaki Nii} and {Toyota Morimoto} and {Hisayo S. Momose} and {Kuniyoshi Yoshikawa} and {Hidemi Ishiuchi} and {Hiroshi Iwai}},
publisher = {CRC Press},
booktitle = {The VLSI Handbook.}
}
@article{journals/mr/IwaiO02,
title = {Silicon integrated circuit technology from past to future.},
year = {2002},
journal = {Microelectron. Reliab.},
author = {{Hiroshi Iwai} and {Shun'ichiro Ohmi}}
}
@article{journals/mr/IwaiO02a,
title = {Trend of CMOS downsizing and its reliability.},
year = {2002},
journal = {Microelectron. Reliab.},
author = {{Hiroshi Iwai} and {S. Ohmi}}
}
@inproceedings{conf/vlsid/Iwai04,
title = {CMOS Scaling for sub-90 nm to sub-10 nm.},
year = {2004},
booktitle = {VLSI Design},
author = {{Hiroshi Iwai}},
publisher = {IEEE Computer Society},
booktitle = {17th International Conference on VLSI Design (VLSI Design 2004), with the 3rd International Conference on Embedded Systems Design, 5-9 January 2004, Mumbai, India}
}
@inproceedings{conf/cicc/KawaCIGCCFLLSW05,
title = {Foundries, EDA vendors, and designers: who shoulders the blame when a design doesn't work in the nano-scale and wireless era?},
year = {2005},
booktitle = {CICC},
author = {{Jamil Kawa} and {Yuhua Cheng} and {Hiroshi Iwai} and {Richard Goering} and {Michael Campbell} and {Raul Camposano} and {Jon Fields} and {Patrick Lin} and {Steve Lloyd} and {Joseph Sawicki} and {Ed Wan}},
publisher = {IEEE},
booktitle = {Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, CICC 2005, DoubleTree Hotel, San Jose, California, USA, September 18-21, 2005}
}
@inproceedings{conf/pimrc/DaoCSAISO05,
title = {Measurements on Area Coverage of 5GHZ Band MIMO-OFDM System in Residential Home Environment.},
year = {2005},
booktitle = {PIMRC},
author = {{Nguyen Dung Dao} and {Hai-Yeow-Eugene Chua} and {Kei Sakaguchi} and {Kiyomichi Araki} and {Hiroshi Iwai} and {Tsutomu Sakata} and {Koichi Ogawa}},
publisher = {IEEE},
booktitle = {Proceedings of the IEEE 16th International Symposium on Personal, Indoor and Mobile Radio Communications, Berlin, Germany, September 11-14, 2005}
}
@article{journals/mj/KimMOTI05,
title = {Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation.},
year = {2005},
journal = {Microelectron. J.},
author = {{Yongshik Kim} and {Kunihiro Miyauchi} and {Shun'ichiro Ohmi} and {Kazuo Tsutsui} and {Hiroshi Iwai}}
}
@article{journals/mr/MirandaMKI05,
title = {Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress.},
year = {2005},
journal = {Microelectron. Reliab.},
author = {{Enrique Miranda 002} and {Joel Molina Reyes} and {Y. Kim} and {Hiroshi Iwai}}
}
@inproceedings{conf/vtc/TranDSAISO06,
title = {Performance Analysis of MIMO-OFDM Systems using Indoor Wideband MIMO Channel Measurement Data.},
year = {2006},
booktitle = {VTC Spring},
author = {{Gia Khanh Tran} and {Nguyen Dung Dao} and {Kei Sakaguchi} and {Kiyomichi Araki} and {Hiroshi Iwai} and {Tsutomu Sakata} and {Koichi Ogawa}},
publisher = {IEEE},
booktitle = {Proceedings of the 63rd IEEE Vehicular Technology Conference, VTC Spring 2006, 7-10 May 2006, Melbourne, Australia}
}
@article{journals/ieiceee/NgSKATHI06,
title = {Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing.},
year = {2006},
journal = {IEICE Electron. Express},
author = {{Jin-Aun Ng} and {Nobuyuki Sugii} and {Kuniyuki Kakushima} and {Parhat Ahmet} and {Kazuo Tsutsui} and {Takeo Hattori} and {Hiroshi Iwai}}
}
@inproceedings{conf/pimrc/OgawaAIY07,
title = {Effects of Received Power Imbalance on the Channel Capacity of a Handset MIMO.},
year = {2007},
booktitle = {PIMRC},
author = {{Koichi Ogawa} and {Satoru Amari} and {Hiroshi Iwai} and {Atsushi Yamamoto}},
publisher = {IEEE},
booktitle = {Proceedings of the IEEE 18th International Symposium on Personal, Indoor and Mobile Radio Communications, PIMRC 2007, 3-7 September 2007, Athens, Greece}
}
@article{journals/ieiceee/ReyesKATSHI07,
title = {Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress.},
year = {2007},
journal = {IEICE Electron. Express},
author = {{Joel Molina Reyes} and {Kuniyuki Kakushima} and {Parhat Ahmet} and {Kazuo Tsutsui} and {Nobuyuki Sugii} and {Takeo Hattori} and {Hiroshi Iwai}}
}
@article{journals/ieicet/IwaiSYS07,
title = {3-D Angular Spectrum Measurements at 5 GHz in a Residential Two-Story House.},
year = {2007},
journal = {IEICE Trans. Commun.},
author = {{Hiroshi Iwai} and {Tsutomu Sakata} and {Atsushi Yamamoto} and {Kei Sakaguchi}}
}
@article{journals/ieicet/KobayashiMTHKRAI07,
title = {Parasitic Effects in Multi-Gate MOSFETs.},
year = {2007},
journal = {IEICE Trans. Electron.},
author = {{Yusuke Kobayashi 002} and {C. Raghunathan Manoj} and {Kazuo Tsutsui} and {Venkanarayan Hariharan} and {Kuniyuki Kakushima} and {V. Ramgopal Rao} and {Parhat Ahmet} and {Hiroshi Iwai}}
}
@article{journals/mr/AhmetNKNTSHI08,
title = {Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack.},
year = {2008},
journal = {Microelectron. Reliab.},
author = {{Parhat Ahmet} and {Kentaro Nakagawa} and {Kuniyuki Kakushima} and {Hiroshi Nohira} and {Kazuo Tsutsui} and {Nobuyuki Sugii} and {Takeo Hattori} and {Hiroshi Iwai}}
}
@article{journals/mr/SiuWTKI09,
title = {Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors.},
year = {2009},
journal = {Microelectron. Reliab.},
author = {{Sik-Lam Siu} and {Hei Wong} and {Wing-Shan Tam} and {Kuniyuki Kakushima} and {Hiroshi Iwai}}
}
@article{journals/ieicet/IwaiSSY10,
title = {Performance Evaluation of Spatial Correlation Characteristics for Handset Antennas Using Spatial Fading Emulator Based on Clarke's Model.},
year = {2010},
journal = {IEICE Trans. Commun.},
author = {{Hiroshi Iwai} and {Kei Sakaguchi} and {Tsutomu Sakata} and {Atsushi Yamamoto}}
}
@article{journals/ieicet/ShimomuraKI10,
title = {Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs.},
year = {2010},
journal = {IEICE Trans. Electron.},
author = {{Hiroshi Shimomura} and {Kuniyuki Kakushima} and {Hiroshi Iwai}}
}
@article{journals/ieicet/ShimomuraKI10a,
title = {Equivalent Noise Temperature Representation for Scaled MOSFETs.},
year = {2010},
journal = {IEICE Trans. Electron.},
author = {{Hiroshi Shimomura} and {Kuniyuki Kakushima} and {Hiroshi Iwai}}
}
@article{journals/ieicet/TranDSAISO10,
title = {Performance Analysis of MIMO Schemes in Residential Home Environment via Wideband MIMO Propagation Measurement.},
year = {2010},
journal = {IEICE Trans. Fundam. Electron. Commun. Comput. Sci.},
author = {{Gia Khanh Tran} and {Nguyen Dung Dao} and {Kei Sakaguchi} and {Kiyomichi Araki} and {Hiroshi Iwai} and {Tsutomu Sakata} and {Koichi Ogawa}}
}
@article{journals/mr/KakushimaOKKTKSANTSHI10,
title = {SrO capping effect for La2O3/Ce-silicate gate dielectrics.},
year = {2010},
journal = {Microelectron. Reliab.},
author = {{Kuniyuki Kakushima} and {K. Okamoto} and {T. Koyanagi} and {M. Kouda} and {Kiichi Tachi} and {Takamasa Kawanago} and {J. Song} and {Parhat Ahmet} and {Hiroshi Nohira} and {Kazuo Tsutsui} and {Nobuyuki Sugii} and {Takeo Hattori} and {Hiroshi Iwai}}
}
@article{journals/mr/KakushimaTATSHI10,
title = {Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics.},
year = {2010},
journal = {Microelectron. Reliab.},
author = {{Kuniyuki Kakushima} and {Kiichi Tachi} and {Parhat Ahmet} and {Kazuo Tsutsui} and {Nobuyuki Sugii} and {Takeo Hattori} and {Hiroshi Iwai}}
}
@article{journals/mr/KobayashiKARTI10,
title = {Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness.},
year = {2010},
journal = {Microelectron. Reliab.},
author = {{Yusuke Kobayashi 002} and {Kuniyuki Kakushima} and {Parhat Ahmet} and {V. Ramgopal Rao} and {Kazuo Tsutsui} and {Hiroshi Iwai}}
}
@article{journals/chinaf/IwaiNSIOYOKA11,
title = {Si nanowire FET and its modeling.},
year = {2011},
journal = {Sci. China Inf. Sci.},
author = {{Hiroshi Iwai} and {Kenji Natori} and {Kenji Shiraishi} and {Jun-ichi Iwata} and {Atsushi Oshiyama} and {Keisaku Yamada} and {Kenji Ohmori} and {Kuniyuki Kakushima} and {Parhat Ahmet}}
}
@article{journals/mr/SatoKAONYI11,
title = {Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors.},
year = {2011},
journal = {Microelectron. Reliab.},
author = {{Soshi Sato} and {Kuniyuki Kakushima} and {Parhat Ahmet} and {Kenji Ohmori} and {Kenji Natori} and {Keisaku Yamada} and {Hiroshi Iwai}}
}
@article{journals/mr/TachiBKICE11,
title = {Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs.},
year = {2011},
journal = {Microelectron. Reliab.},
author = {{Kiichi Tachi} and {Sylvain Barraud} and {Kuniyuki Kakushima} and {Hiroshi Iwai} and {Sorin Cristoloveanu} and {Thomas Ernst 005}}
}
@article{journals/mr/ZadeSKSATNSNHSI11,
title = {Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise.},
year = {2011},
journal = {Microelectron. Reliab.},
author = {{D. Zade} and {Soshi Sato} and {Kuniyuki Kakushima} and {A. Srivastava} and {Parhat Ahmet} and {Kazuo Tsutsui} and {Akira Nishiyama} and {Nobuyuki Sugii} and {Kenji Natori} and {Takeo Hattori} and {Chandan Kumar Sarkar} and {Hiroshi Iwai}}
}
@inproceedings{conf/essderc/KawanagoKAKNSTNHI12,
title = {(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.},
year = {2012},
booktitle = {ESSDERC},
author = {{Takamasa Kawanago} and {Kuniyuki Kakushima} and {Parhat Ahmet} and {Yoshinori Kataoka} and {Akira Nishiyama} and {Nobuyuki Sugii} and {Kazuo Tsutsui} and {Kenji Natori} and {Takeo Hattori} and {Hiroshi Iwai}},
publisher = {IEEE},
booktitle = {Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012}
}
@inproceedings{conf/essderc/KoyamaCCBIGR12,
title = {Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs.},
year = {2012},
booktitle = {ESSDERC},
author = {{Masahiro Koyama} and {Mikaël Cassé} and {Remi Coquand} and {Sylvain Barraud} and {Hiroshi Iwai} and {Gérard Ghibaudo} and {Gilles Reimbold}},
publisher = {IEEE},
booktitle = {Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012}
}
@article{journals/mr/DouKATNSNHI12,
title = {Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer.},
year = {2012},
journal = {Microelectron. Reliab.},
author = {{Chunmeng Dou} and {Kuniyuki Kakushima} and {Parhat Ahmet} and {Kazuo Tsutsui} and {Akira Nishiyama} and {Nobuyuki Sugii} and {Kenji Natori} and {Takeo Hattori} and {Hiroshi Iwai}}
}
@article{journals/mr/MamatrishatKSKATKNSNHI12,
title = {Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors.},
year = {2012},
journal = {Microelectron. Reliab.},
author = {{M. Mamatrishat} and {T. Kubota} and {T. Seki} and {Kuniyuki Kakushima} and {Parhat Ahmet} and {Kazuo Tsutsui} and {Yoshinori Kataoka} and {Akira Nishiyama} and {Nobuyuki Sugii} and {Kenji Natori} and {Takeo Hattori} and {Hiroshi Iwai}}
}
@article{journals/mr/MirandaKKSI12,
title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.},
year = {2012},
journal = {Microelectron. Reliab.},
author = {{Enrique Miranda 002} and {Takamasa Kawanago} and {Kuniyuki Kakushima} and {Jordi Suñé} and {Hiroshi Iwai}}
}
@article{journals/mr/SiuTWKKI12,
title = {Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors.},
year = {2012},
journal = {Microelectron. Reliab.},
author = {{S.-L. Siu} and {Wing-Shan Tam} and {Hei Wong} and {Chi-Wah Kok} and {K. Kakusima} and {Hiroshi Iwai}}
}
@article{journals/mr/YangWKI12,
title = {Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric.},
year = {2012},
journal = {Microelectron. Reliab.},
author = {{B. L. Yang} and {Hei Wong} and {Kuniyuki Kakushima} and {Hiroshi Iwai}}
}
@inproceedings{conf/essderc/KawanagoKKNSWTNI13,
title = {Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.},
year = {2013},
booktitle = {ESSDERC},
author = {{Takamasa Kawanago} and {Kuniyuki Kakushima} and {Yoshinori Kataoka} and {Akira Nishiyama} and {Nobuyuki Sugii} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Kenji Natori} and {Hiroshi Iwai}},
publisher = {IEEE},
booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013}
}
@inproceedings{conf/essderc/KoyamaCCBGIR13,
title = {Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs.},
year = {2013},
booktitle = {ESSDERC},
author = {{Masahiro Koyama} and {Mikaël Cassé} and {Remi Coquand} and {Sylvain Barraud} and {Gérard Ghibaudo} and {Hiroshi Iwai} and {Gilles Reimbold}},
publisher = {IEEE},
booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013}
}
@inproceedings{conf/pimrc/MaeharaATSSAI13,
title = {Experiment on battery-less sensor activation via multi-point wireless energy transmission.},
year = {2013},
booktitle = {PIMRC},
author = {{Daiki Maehara} and {Ryota Akai} and {Gia Khanh Tran} and {Kei Sakaguchi} and {Seiichi Sampei} and {Kiyomichi Araki} and {Hiroshi Iwai}},
publisher = {IEEE},
booktitle = {24th IEEE Annual International Symposium on Personal, Indoor, and Mobile Radio Communications, PIMRC 2013, London, United Kingdom, September 8-11, 2013}
}
@article{journals/mr/TomitaKYMUTFMI13,
title = {Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions.},
year = {2013},
journal = {Microelectron. Reliab.},
author = {{Ryuji Tomita} and {Hidehiko Kimura} and {M. Yasuda} and {K. Maeda} and {S. Ueno} and {T. Tonegawa} and {T. Fujimoto} and {M. Moritoki} and {Hiroshi Iwai}}
}
@article{journals/mr/TomitaKYMUTKNMI13,
title = {Formation of high resistivity phases of nickel silicide at small area.},
year = {2013},
journal = {Microelectron. Reliab.},
author = {{Ryuji Tomita} and {Hidehiko Kimura} and {M. Yasuda} and {K. Maeda} and {S. Ueno} and {T. Tomizawa} and {Y. Kunimune} and {H. Nakamura} and {M. Moritoki} and {Hiroshi Iwai}}
}
@article{journals/ieicet/SakataYOITS14,
title = {A Spatial Fading Emulator for Evaluation of MIMO Antennas in a Cluster Environment.},
year = {2014},
journal = {IEICE Trans. Commun.},
author = {{Tsutomu Sakata} and {Atsushi Yamamoto} and {Koichi Ogawa} and {Hiroshi Iwai} and {Jun-ichi Takada} and {Kei Sakaguchi}}
}
@article{journals/mr/DouLVICMKITTG14,
title = {Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures.},
year = {2014},
journal = {Microelectron. Reliab.},
author = {{Chunmeng Dou} and {Dennis Lin} and {Abhitosh Vais} and {Tsvetan Ivanov} and {Han-Ping Chen} and {Koen Martens} and {Kuniyuki Kakushima} and {Hiroshi Iwai} and {Yuan Taur} and {Aaron Thean} and {Guido Groeseneken}}
}
@article{journals/mr/DouSNKAKNSWTNI14,
title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.},
year = {2014},
journal = {Microelectron. Reliab.},
author = {{Chunmeng Dou} and {Tomoya Shoji} and {Kazuhiro Nakajima} and {Kuniyuki Kakushima} and {Parhat Ahmet} and {Yoshinori Kataoka} and {Akira Nishiyama} and {Nobuyuki Sugii} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Kenji Natori} and {Hiroshi Iwai}}
}
@article{journals/mr/FengWYDIK14,
title = {On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric.},
year = {2014},
journal = {Microelectron. Reliab.},
author = {{Xuan Feng} and {Hei Wong} and {B. L. Yang} and {Shurong Dong} and {Hiroshi Iwai} and {Kuniyuki Kakushima}}
}
@article{journals/mr/WuHKOWNSWTKNYI14,
title = {A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.},
year = {2014},
journal = {Microelectron. Reliab.},
author = {{Yan Wu} and {Hiroyuki Hasegawa} and {Kuniyuki Kakushima} and {Kenji Ohmori} and {Takanobu Watanabe} and {Akira Nishiyama} and {Nobuyuki Sugii} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Yoshinori Kataoka} and {Kenji Natori} and {Keisaku Yamada} and {Hiroshi Iwai}}
}
@article{journals/mr/LiSOAKKNSWTNI15,
title = {Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.},
year = {2015},
journal = {Microelectron. Reliab.},
author = {{Wei Li} and {Akito Sasaki} and {Hideyuki Oozu} and {Katsuaki Aoki} and {Kuniyuki Kakushima} and {Yoshinori Kataoka} and {Akira Nishiyama} and {Nobuyuki Sugii} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Kenji Natori} and {Hiroshi Iwai}}
}
@article{journals/mr/LiSOAKKNSWTNI15a,
title = {Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.},
year = {2015},
journal = {Microelectron. Reliab.},
author = {{Wei Li} and {Akito Sasaki} and {Hideyuki Oozu} and {Katsuaki Aoki} and {Kuniyuki Kakushima} and {Yoshinori Kataoka} and {Akira Nishiyama} and {Nobuyuki Sugii} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Kenji Natori} and {Hiroshi Iwai}}
}
@inproceedings{conf/essderc/Iwai16,
title = {End of the downsizing and world after that.},
year = {2016},
booktitle = {ESSDERC},
author = {{Hiroshi Iwai}},
publisher = {IEEE},
booktitle = {46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016}
}
@article{journals/chinaf/HuangICDW16,
title = {Editor's note.},
year = {2016},
journal = {Sci. China Inf. Sci.},
author = {{Ru Huang} and {Hiroshi Iwai} and {Cor Claeys} and {Simon Deleonibus} and {Runsheng Wang}}
}
@article{journals/mr/ChenKWTINNK16,
title = {La2O3 gate dielectrics for AlGaN/GaN HEMT.},
year = {2016},
journal = {Microelectron. Reliab.},
author = {{J. Chen} and {Takamasa Kawanago} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Hiroshi Iwai} and {D. Nohata} and {Hiroshi Nohira} and {Kuniyuki Kakushima}}
}
@article{journals/mr/ChenWTIK16,
title = {Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.},
year = {2016},
journal = {Microelectron. Reliab.},
author = {{J. Chen} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Hiroshi Iwai} and {Kuniyuki Kakushima}}
}
@article{journals/mr/HadiSWTIK16,
title = {Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes.},
year = {2016},
journal = {Microelectron. Reliab.},
author = {{M. S. Hadi} and {Nobuyuki Sugii} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Hiroshi Iwai} and {Kuniyuki Kakushima}}
}
@inproceedings{conf/asicon/TsutsuiKHNNWMSM17,
title = {3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).},
year = {2017},
booktitle = {ASICON},
author = {{Kazuo Tsutsui} and {Kuniyuki Kakushima} and {Takuya Hoshii} and {A. Nakajima} and {Shinichi Nishizawa} and {Hitoshi Wakabayashi} and {Iriya Muneta} and {K. Sato} and {Tomoko Matsudai} and {Wataru Saito} and {Takuya Saraya} and {K. Itou} and {M. Fukui} and {S. Suzuki} and {Masaharu Kobayashi} and {T. Takakura} and {Toshiro Hiramoto} and {Atsushi Ogura} and {Y. Numasawa} and {Ichiro Omura} and {H. Ohashi} and {Hiroshi Iwai}},
publisher = {IEEE},
booktitle = {12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017}
}
@article{journals/mr/SasakiONAKSKLKT17,
title = {Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries.},
year = {2017},
journal = {Microelectron. Reliab.},
author = {{Akito Sasaki} and {Hideyuki Oozu} and {Miho Nakamura} and {Katsuaki Aoki} and {Yoshinori Kataoka} and {Syuichi Saito} and {Kumpei Kobayashi} and {Wei Li} and {Kuniyuki Kakushima} and {Kazuo Tsutsui} and {Hiroshi Iwai}}
}
@inproceedings{conf/vlsic/KakushimaHWSFST18,
title = {New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment.},
year = {2018},
booktitle = {VLSI Circuits},
author = {{Kuniyuki Kakushima} and {Takuya Hoshii} and {M. Watanabe} and {N. Shizyo} and {K. Furukawa} and {Takuya Saraya} and {T. Takakura} and {K. Itou} and {M. Fukui} and {S. Suzuki} and {Ken Takeuchi} and {Iriya Muneta} and {Hitoshi Wakabayashi} and {Y. Numasawa} and {Atsushi Ogura} and {Shinichi Nishizawa} and {Kazuo Tsutsui} and {Toshiro Hiramoto} and {H. Ohashi} and {Hiroshi Iwai}},
publisher = {IEEE},
booktitle = {2018 IEEE Symposium on VLSI Circuits, Honolulu, HI, USA, June 18-22, 2018}
}
@article{journals/mr/LeiWTIFTYK18,
title = {Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing.},
year = {2018},
journal = {Microelectron. Reliab.},
author = {{Yiming Lei} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Hiroshi Iwai} and {Masayuki Furuhashi} and {Shingo Tomohisa} and {Satoshi Yamakawa} and {Kuniyuki Kakushima}}
}
@article{journals/mr/LeiWTIFTYK18a,
title = {Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors.},
year = {2018},
journal = {Microelectron. Reliab.},
author = {{Yiming Lei} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Hiroshi Iwai} and {Masayuki Furuhashi} and {Shingo Tomohisa} and {Satoshi Yamakawa} and {Kuniyuki Kakushima}}
}
@inproceedings{conf/asicon/HiramotoSMSKHFW19,
title = {Switching of 3300V Scaled IGBT by 5V Gate Drive.},
year = {2019},
booktitle = {ASICON},
author = {{Toshiro Hiramoto} and {Katsumi Satoh} and {Tomoko Matsudai} and {Wataru Saito} and {Kuniyuki Kakushima} and {Takuya Hoshii} and {Kazuyoshi Furukawa} and {Masahiro Watanabe} and {Naoyuki Shigyo} and {Hitoshi Wakabayashi} and {Kazuo Tsutsui} and {Hiroshi Iwai} and {Atsushi Ogura} and {Shinichi Nishizawa} and {Ichiro Omura} and {Hiromichi Ohashi} and {Kazuo Itou} and {Toshihiro Takakura} and {Munetoshi Fukui} and {Shinichi Suzuki} and {Ken Takeuchi} and {Masanori Tsukuda} and {Yohichiroh Numasawa}},
publisher = {IEEE},
booktitle = {13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, October 29 - November 1, 2019}
}
@inproceedings{conf/asicon/Iwai21,
title = {NMOS LSI Development from 1970's to the beginning of 1980's.},
year = {2021},
booktitle = {ASICON},
author = {{Hiroshi Iwai}},
publisher = {IEEE},
booktitle = {14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021}
}
@inproceedings{conf/asicon/Iwai23,
title = {Development of RFCMOS Technologies in the 1990s in Toshiba.},
year = {2023},
booktitle = {ASICON},
author = {{Hiroshi Iwai}},
publisher = {IEEE},
booktitle = {15th IEEE International Conference on ASIC, ASICON 2023, Nanjing, China, October 24-27, 2023}
}