Angle-resolved photoelectron spectroscopy on gate insulators. - Takeo Hattori; Hiroshi Nohira; S. Shinagawa; M. Hori; M. Kase; T. Maruizumi (Microelectron. Reliab., 2007)

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. - Parhat Ahmet; Kentaro Nakagawa; Kuniyuki Kakushima; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2008)

SrO capping effect for La2O3/Ce-silicate gate dielectrics. - Kuniyuki Kakushima; K. Okamoto; T. Koyanagi; M. Kouda; Kiichi Tachi; Takamasa Kawanago; J. Song; Parhat Ahmet; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; et al. (Microelectron. Reliab., 2010)

La2O3 gate dielectrics for AlGaN/GaN HEMT. - J. Chen; Takamasa Kawanago; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; D. Nohata; Hiroshi Nohira; Kuniyuki Kakushima (Microelectron. Reliab., 2016)