A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting. - Sangjoo Lee; Kyungho Lee; Jongeun Park; Hyungjun Han; Younghwan Park; Taesub Jung; Youngheup Jang; Bumsuk Kim; Yitae Kim; Shay Hamami; Uzi Hizi; Mickey Bahar; et al. (ISSCC, 2011)

Backside-illumination 14µm-pixel QVGA time-of-flight CMOS imager. - Min Seok Oh; Hae Kyung Kong; Han Soo Lee; Kyungil Kim; Kwanghyuk Bae; Soo Bang Kim; Sungkwan Kim; Moosup Lim; Jung Chak Ahn; Tae-Chan Kim 002; Hiroshige Goto; Seoung Hyun Kim; et al. (NEWCAS, 2012)

A novel pixel design with hybrid type isolation scheme for low dark current in CMOS image sensor. - Sung Ho Choi; Yi Tae Kim; Min Seok Oh; Younghwan Park; Jeongjin Cho; Youngheup Jang; Hyungjun Han; Jongwon Choi; Howoo Park; Sangil Jung; Hoon Sang Oh; Jung Chak Ahn; et al. (Sensors, Cameras, and Systems for Industrial and Scientific Applications, 2013)

7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate. - JungChak Ahn; Kyungho Lee; Yitae Kim; Heegeun Jeong; Bumsuk Kim; Hongki Kim; Jongeun Park; Taesub Jung; Wonje Park; Taeheon Lee; Eunkyung Park 003; Sangjun Choi; et al. (ISSCC, 2014)