Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence. - Hiroshi Okada; Yuki Okada; Hiroto Sekiguchi; Akihiro Wakahara; Shin-ichiro Sato; Takeshi Ohshima (IEICE Trans. Electron., 2014)