Design of a rugged 60 V VDMOS transistor. - Edward Xu; Olivier Trescases; I-Shan Michael Sun; Dora Lee; Wai Tung Ng; Kenji Fukumoto; Akira Ishikawa; Yuichi Furukawa; Hisaya Imai; Takashi Naito; Nobuyuki Sato; Satoru Tamura; et al. (IET Circuits Devices Syst., 2007)

Impact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology. - Marko Koricic; Tomislav Suligoj; Hidenori Mochizuki; So-ichi Morita; Katsumi Shinomura; Hisaya Imai (MIPRO, 2011)