Soft- and Hard-Error Radiation Reliability of 228 KB $3 mathrm{T}+1 mathrm{C}$ Oxide Semiconductor Memory. - H. Takahashi; Y. Okamoto; Toshiki Hamada; Yusuke Komura; S. Watanabe; K. Tsuda; H. Sawai; Takanori Matsuzaki; Yoshinori Ando; Tatsuya Onuki; Hitoshi Kunitake; Shunpei Yamazaki; et al. (IRPS, 2023)

Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure. - Yusuke Komura; Shoki Miyata; Yuki Okamoto; Yuki Tamatsukuri; Hiroki Inoue; Toshihiko Saito; Munehiro Kozuma; Hidetomo Kobayashi; Tatsuya Onuki; Yuichi Yanagisawa; Toshihiko Takeuchi; Yutaka Okazaki; et al. (VLSI Technology and Circuits, 2023)

1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS. - Yuki Okamoto; Yusuke Komura; Toshiki Mizuguchi; Toshihiko Saito; Minato Ito; K. Kimura; Tatsuya Onuki; Yoshinori Ando; Hiromi Sawai; Tsutomu Murakawa; Hitoshi Kunitake; Takanori Matsuzaki; et al. (VLSI Technology and Circuits, 2023)

Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM. - Hiraki Inoue; Takeya Hirose; Toshiki Mizuguchi; Yusuke Komura; Toshihiko Saito; Minato Ito; Kiyotaka Kimura; Tatsuya Onuki; Yoshinori Ando; Hiromi Sawai; Tsutomu Murakawa; Hitoshi Kunitake; et al. (IMW, 2024)