A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices. - Ping-Chun Wu; Jian-Wei Su; Yen-Lin Chung; Li-Yang Hong; Jin-Sheng Ren; Fu-Chun Chang; Yuan Wu 009; Ho-Yu Chen; Chen-Hsun Lin; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; et al. (ISSCC, 2022)

A 22nm 832Kb Hybrid-Domain Floating-Point SRAM In-Memory-Compute Macro with 16.2-70.2TFLOPS/W for High-Accuracy AI-Edge Devices. - Ping-Chun Wu; Jian-Wei Su; Li-Yang Hong; Jin-Sheng Ren; Chih-Han Chien; Ho-Yu Chen; Chao-En Ke; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; Wei-Chung Lo; Shih-Chieh Chang; et al. (ISSCC, 2023)

34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices. - Win-San Khwa; Ping-Chun Wu; Jui-Jen Wu; Jian-Wei Su; Ho-Yu Chen; Zhao-En Ke; Ting-Chien Chiu; Jun-Ming Hsu; Chiao-Yen Cheng; Yu-Chen Chen; Chung-Chuan Lo; Ren-Shuo Liu; et al. (ISSCC, 2024)

A Floating-Point 6T SRAM In-Memory-Compute Macro Using Hybrid-Domain Structure for Advanced AI Edge Chips. - Ping-Chun Wu; Jian-Wei Su; Li-Yang Hong; Jin-Sheng Ren; Chih-Han Chien; Ho-Yu Chen; Chao-En Ke; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; Wei-Chung Lo; Shih-Chieh Chang; et al. (IEEE J. Solid State Circuits, 2024)

An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental Accumulation for AI Edge Chips. - Ping-Chun Wu; Jian-Wei Su; Yen-Lin Chung; Li-Yang Hong; Jin-Sheng Ren; Fu-Chun Chang; Yuan Wu 009; Ho-Yu Chen; Chen-Hsun Lin; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; et al. (IEEE J. Solid State Circuits, 2024)

An Integer-Floating-Point Dual-Mode Gain-Cell Computing-in-Memory Macro for Advanced AI Edge Chips. - Ping-Chun Wu; Win-San Khwa; Jui-Jen Wu; Jian-Wei Su; Chuan-Jia Jhang; Ho-Yu Chen; Zhao-En Ke; Ting-Chien Chiu; Jun-Ming Hsu; Chiao-Yen Cheng; Yu-Chen Chen; Chung-Chuan Lo; et al. (IEEE J. Solid State Circuits, 2025)