122 GHz low-noise-amplifier in sige technology. - Wolfgang Winkler; Wojciech Debski; Bernd Heinemann; Falk Korndörfer; Holger Rücker; Klaus Schmalz; Christoph Scheytt; Bernd Tillack (ESSCIRC, 2009)

7-Gb/s monolithic photoreceiver fabricated with 0.25-µm SiGe BiCMOS technology. - Jin-Sung Youn; Myung-Jae Lee; Kang-Yeob Park; Holger Rücker; Woo-Young Choi (IEICE Electron. Express, 2010)

A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. - Holger Rücker; Bernd Heinemann; Wolfgang Winkler; Rainer Barth; Johannes Borngräber; Jürgen Drews; Gerhard G. Fischer; Alexander Fox; Thomas Grabolla; Ulrich Haak; Dieter Knoll; Falk Korndörfer; et al. (IEEE J. Solid State Circuits, 2010)

A bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector. - Jin-Sung Youn; Myung-Jae Lee; Kang-Yeob Park; Holger Rücker; Woo-Young Choi (IEICE Electron. Express, 2011)

Complementary RF-LDMOS transistors realized with standard CMOS implantations. - Andreas Mai; Holger Rücker (ESSDERC, 2012)

60-GHz voltage-controlled oscillator and frequency divider in 0.25-µm SiGe BiCMOS technology. - Jeong-Min Lee; Woo-Young Choi; Holger Rücker (ISOCC, 2012)

SiGe BiCMOS technology for mm-wave systems. - Holger Rücker; Bernd Heinemann (ISOCC, 2012)

14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS. - Ullrich R. Pfeiffer; Yan Zhao 002; Janus Grzyb; Richard Al Hadi; Neelanjan Sarmah; Wolfgang Forster; Holger Rücker; Bernd Heinemann (ISSCC, 2014)

A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications. - Ullrich R. Pfeiffer; Yan Zhao 002; Janusz Grzyb; Richard Al Hadi; Neelanjan Sarmah; Wolfgang Forster; Holger Rücker; Bernd Heinemann (IEEE J. Solid State Circuits, 2014)

Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. - Pascal Chevalier 002; Michael Schröter; Colombo R. Bolognesi; Vincenzo d'Alessandro; Maria Alexandrova; Josef Böck; Ralf Flickiger; Sébastien Fregonese; Bernd Heinemann; Christoph Jungemann; Rickard Lovblom; Cristell Maneux; et al. (Proc. IEEE, 2017)

SiGe BiCMOS Current Status and Future Trends in Europe. - Pascal Chevalier 002; Wolfgang Liebl; Holger Rücker; Alexis Gauthier; Dirk Manger; Bernd Heinemann; Grégory Avenier; Josef Böck (BCICTS, 2018)

Device Architectures for High-speed SiGe HBTs. - Holger Rücker; Bernd Heinemann (BCICTS, 2019)

A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology. - Florian Vogelsang; David Starke; Jonathan Wittemeier; Holger Rücker; Nils Pohl (BCICTS, 2020)

Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. - Sébastien Fregonese; Chhandak Mukherjee; Holger Rücker; Pascal Chevalier 002; Gerhard Fischer; Didier Céli; Marina Deng; Marine Couret; François Marc; Cristell Maneux; Thomas Zimmer (BCICTS, 2021)

Analog 2: 1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology. - Tobias Tannert; Markus Grözing; Manfred Berroth; Christian Schmidt 001; Jung Han Choi; Christoph Caspar; Jonathan Schostak; Volker Jungnickel; Ronald Freund; Holger Rücker (BCICTS, 2021)

A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications. - Thomas Bücher; Janusz Grzyb; Philipp Hillger; Holger Rücker; Bernd Heinemann; Ullrich R. Pfeiffer (ESSCIRC, 2021)

A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology. - Florian Vogelsang; Christian Bredendiek; Jan Schopfel; Holger Rücker; Nils Pohl (BCICTS, 2022)

A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications. - Thomas Bücher; Janusz Grzyb; Philipp Hillger; Holger Rücker; Bernd Heinemann; Ullrich R. Pfeiffer (IEEE J. Solid State Circuits, 2022)