A Two-Write and Two-Read Multi-Port SRAM with Shared Write Bit-Line Scheme and Selective Read Path for Low Power Operation. - Dao-Ping Wang; Hon-Jarn Lin; Wei Hwang (J. Low Power Electron., 2013)

Low-Power Multiport SRAM With Cross-Point Write Word-Lines, Shared Write Bit-Lines, and Shared Write Row-Access Transistors. - Dao-Ping Wang; Hon-Jarn Lin; Ching-Te Chuang; Wei Hwang (IEEE Trans. Circuits Syst. II Express Briefs, 2014)

A 1.4Mb 40-nm embedded ReRAM macro with 0.07um2 bit cell, 2.7mA/100MHz low-power read and hybrid write verify for high endurance application. - Chia-Fu Lee; Hon-Jarn Lin; Chiu-Wang Lien; Yu-Der Chih; Tsung-Yung Jonathan Chang (A-SSCC, 2017)

Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time. - Yi-Chun Shih; Chia-Fu Lee; Yen-An Chang; Po-Hao Lee; Hon-Jarn Lin; Yu-Lin Chen; Ku-Feng Lin; Ta-Ching Yeh; Hung-Chang Yu; Harry Chuang; Yu-Der Chih; Tsung-Yung Jonathan Chang (VLSI Circuits, 2018)

Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $ mu$ A Sensing Resolution, and 17.5-nS Read Access Time. - Yi-Chun Shih; Chia-Fu Lee; Yen-An Chang; Po-Hao Lee; Hon-Jarn Lin; Yu-Lin Chen; Ku-Feng Lin; Ta-Ching Yeh; Hung-Chang Yu; Harry Chuang; Yu-Der Chih; Tsung-Yung Jonathan Chang (IEEE J. Solid State Circuits, 2019)

13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference. - Yu-Der Chih; Yi-Chun Shih; Chia-Fu Lee; Yen-An Chang; Po-Hao Lee; Hon-Jarn Lin; Yu-Lin Chen; Chieh-Pu Lo; Meng-Chun Shih; Kuei-Hung Shen; Harry Chuang; Tsung-Yung Jonathan Chang (ISSCC, 2020)

A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity. - Po-Hao Lee; Chia-Fu Lee; Yi-Chun Shih; Hon-Jarn Lin; Yen-An Chang; Cheng-Han Lu; Yu-Lin Chen; Chieh-Pu Lo; Chung-Chieh Chen; Cheng-Hsiung Kuo; Tan-Li Chou; Chia-Yu Wang; et al. (ISSCC, 2023)