Symmetrical triple-threshold-voltage nine-transistor SRAM circuit with superior noise immunity and overall electrical quality. - Hong Zhu 009; Volkan Kursun (ISOCC, 2011)

Novel dual-threshold-voltage energy-efficient buffers for driving large extrinsic load capacitance. - Hong Zhu 009; Volkan Kursun (ISCAS, 2013)

Impact of process parameter and supply voltage fluctuations on multi-threshold-voltage seven-transistor static memory cells. - Hong Zhu 009; Volkan Kursun (ISQED, 2013)

Triple-threshold-voltage 9-transistor SRAM cell for data stability and energy-efficiency at ultra-low power supply voltages. - Hong Zhu 009; Volkan Kursun (ICM, 2014)

A comprehensive comparison of superior triple-threshold-voltage 7-transistor, 8-transistor, and 9-transistor SRAM cells. - Hong Zhu 009; Volkan Kursun (ISCAS, 2014)

A Comprehensive Comparison of Data Stability Enhancement Techniques With Novel Nanoscale SRAM Cells Under Parameter Fluctuations. - Hong Zhu 009; Volkan Kursun (IEEE Trans. Circuits Syst. I Regul. Pap., 2014)

Novel Low-Leakage and High-Speed Triple-Threshold-Voltage Buffers With Skewed Inputs and Outputs. - Hong Zhu 009; Volkan Kursun (IEEE Trans. Circuits Syst. I Regul. Pap., 2014)

2-Phase high-frequency clock distribution with SPLIT-IO dual-Vt repeaters for suppressed leakage currents. - Hong Zhu 009; Volkan Kursun (ISCAS, 2015)