Improved empirical DC I-V model for 4H-SiC MESFETs. - QuanJun Cao; Yimen Zhang; Yuming Zhang; HongLiang Lv; YueHu Wang; XiaoYan Tang; Hui Guo (Sci. China Ser. F Inf. Sci., 2008)

The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors. - Jincan Zhang; Yuming Zhang; HongLiang Lv; Yimen Zhang; Shi Yang (Microelectron. Reliab., 2012)

A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology. - Shaojun Li; HongLiang Lv; Yimen Zhang; Yuming Zhang; Yue Wu; Muhammad Asif 015 (IEICE Electron. Express, 2018)

A broadband high efficiency monolithic power amplifier with GaAs HBT. - Shaojun Li; HongLiang Lv; Yimen Zhang; Yuming Zhang; Yansong Zhang; Muhammad Asif 015 (IEICE Electron. Express, 2018)

Analysis and Design of a Broadband Frequency Divider Using Modified Active Loads in GaAs HBT. - Yue Wu; HongLiang Lv; Yuming Zhang; Yimen Zhang; Shaojun Li (J. Circuits Syst. Comput., 2018)

An Improved InP HEMT Small Signal Model with RC Network. - Shixing Qiao; Hongliang Lv; Yuming Zhang; Yimen Zhang; Peng Ding (ASICON, 2019)

The Study on Fabrication and Characterization of Al0.2In0.8Sb/InAs0.4Sb0.6 Heterostructures by Molecular Beam Epitaxy. - Jing Zhang; Hongliang Lv; Yifeng Song; Haiqiao Ni; Zhichuan Niu; Yuming Zhang (IEEE Access, 2019)

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter. - Shizheng Yang; Hongliang Lv; Bin Lu; Silu Yan; Yuming Zhang (IEEE Access, 2020)

Characteristics of A Novel Quaternary Tunneling Field-Effect Transistor for Low Power Applicaitons. - Yi Zhu; Hongliang Lv; Yuming Zhang; Yimen Zhang; Zhijun Lyu; Jiale Sun (ICTA, 2021)

Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process. - Ranran Zhao; Yuming Zhang; Hongliang Lv; Yue Wu (Sensors, 2022)

Multi-objective neural network modeling and applications to microwave power amplifiers. - Dongyu Zhang; Hongliang Lv; Silu Yan; Yang Hu 006; Qijun Zhang; Chao Han; Ranran Zhao; Yuming Zhang (Microelectron. J., 2024)