A 0.5-V 2.07-fJ/b 497-F2 EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in. - Kunyang Liu; Hongliang Pu; Hirofumi Shinohara (CICC, 2020)

36.3 A Modeling Attack Resilient Strong PUF with Feedback-SPN Structure Having <0.73% Bit Error Rate Through In-Cell Hot-Carrier Injection Burn-In. - Kunyang Liu; Zihan Fu; Gen Li; Hongliang Pu; Zhibo Guan; Xingyu Wang 002; Xinpeng Chen; Hirofumi Shinohara (ISSCC, 2021)

A 0.5-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Burn-In for Stability Reinforcement. - Kunyang Liu; Xinpeng Chen; Hongliang Pu; Hirofumi Shinohara (IEEE J. Solid State Circuits, 2021)