Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application. - Mingcheng Chang; Nigel Chan; Vivek Joshi; Sandra Hecker; Udo Ziller; Petra Poth; Alban Zaka; Tom Herrmann; Seunghwan Seo; Hongsik Yoon; Xin Zou; Zhen Xu; et al. (ESSDERC, 2018)

A Physics based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield Enhancement. - Nishtha S. Gaul; Akhilesh Jaiswal 002; Hongsik Yoon; Taeyoung Lee; Kazutaka Yamane; Joseph Versaggi; Rick Carter; Bipul C. Paul (IMW, 2022)

From Emergence to Prevalence: 22FDX® Embedded STT-MRAM. - Johannes Müller; Aleksandra Titova; Hongsik Yoon; Thomas Merbeth; Martin Weisheit; Georg Wolf; Sanjeeb Bharali; Bert Pfefferling; Yuichi Otani; Tetyana Shapoval; Alberto Cagliani; Ferenc Vajda; et al. (IMW, 2022)

Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities. - Vinayak Bharat Naik; J. H. Lim; Kazutaka Yamane; J. Kwon; Behin-Aein B.; N. L. Chung; S. K 001; R. Chao; C. Chiang; Y. Huang; L. Pu; Yuichi Otani; et al. (IRPS, 2022)