First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 1011, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability. - Jie Zhang; Zhuocheng Zhang; Zehao Lin; Ke Xu; Hongyi Dou; Bo Yang; Xinghang Zhang; Haiyan Wang; Peide D. Ye (VLSI Technology and Circuits, 2023)

Self-Assembled TiN-Metal Nanocomposites Integrated on Flexible Mica Substrates towards Flexible Devices. - Juncheng Liu; Yizhi Zhang; Hongyi Dou; Benson Kunhung Tsai; Abhijeet Choudhury; Haiyan Wang (Sensors, 2024)